Comparing radiation effects in gunn and impatt diodes

Wayne A. Anderson

doi:10.1109/TNS.1971.4326375

Comparing radiation effects in gunn and impatt diodes

Wayne A. Anderson

Department of Electrical Engineering

University at Buffalo

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Several Gunn and IMPATT diodes were subjected to neutron and gamma radiation while in oscillation. This provided data which could not be obtained by diode testing after irradiation. Non-passivated IMPATT diodes were most tolerant of neutron fluence effects. Gunn diodes were insignificantly influenced by this radiation flux but failed at lower fluence levels than did the IMPA1.T diodes.

Original language	English
Pages (from-to)	404-409
Number of pages	6
Journal	IEEE Transactions on Nuclear Science
Volume	18
Issue number	4
DOIs	https://doi.org/10.1109/TNS.1971.4326375
State	Published - Aug 1971

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10.1109/TNS.1971.4326375

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title = "Comparing radiation effects in gunn and impatt diodes",

abstract = "Several Gunn and IMPATT diodes were subjected to neutron and gamma radiation while in oscillation. This provided data which could not be obtained by diode testing after irradiation. Non-passivated IMPATT diodes were most tolerant of neutron fluence effects. Gunn diodes were insignificantly influenced by this radiation flux but failed at lower fluence levels than did the IMPA1.T diodes.",

author = "Anderson, \{Wayne A.\}",

year = "1971",

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doi = "10.1109/TNS.1971.4326375",

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N2 - Several Gunn and IMPATT diodes were subjected to neutron and gamma radiation while in oscillation. This provided data which could not be obtained by diode testing after irradiation. Non-passivated IMPATT diodes were most tolerant of neutron fluence effects. Gunn diodes were insignificantly influenced by this radiation flux but failed at lower fluence levels than did the IMPA1.T diodes.

AB - Several Gunn and IMPATT diodes were subjected to neutron and gamma radiation while in oscillation. This provided data which could not be obtained by diode testing after irradiation. Non-passivated IMPATT diodes were most tolerant of neutron fluence effects. Gunn diodes were insignificantly influenced by this radiation flux but failed at lower fluence levels than did the IMPA1.T diodes.

UR - https://www.scopus.com/pages/publications/24244474167

U2 - 10.1109/TNS.1971.4326375

DO - 10.1109/TNS.1971.4326375

M3 - Article

SN - 0018-9499

VL - 18

SP - 404

EP - 409

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 4

ER -

Comparing radiation effects in gunn and impatt diodes

Abstract

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