@inproceedings{d5c5b25eb0684cc48365d55aebf19131,
title = "Comparison between 1.7 kV SiC SJT and MOSFET power modules",
abstract = "In this paper, a comprehensive evaluation work on 1.7 kV SiC Super Junction Transistor (SJT) power module and 1.7 kV SiC MOSFET power modules is presented. Both device static and dynamic performance is extracted and compared at wide device current range and temperature range. The data presented in this paper can be used as input for medium voltage power conversion system power transistor selection, gate drive design and system level thermal management design. Since the SiC SJT is a new power transistor with unique current driven mechanism. A dedicated section discusses the SiC SJT power module gate drive configuration and device false turn on suppress as well. In a summary, 1.7 kV SiC SJT shows superior on state conductivity, but similar switching performance compared to 1.7 kV SiC MOSFET power modules.",
keywords = "SiC MOSFET, SiC SJT, gate drive, high temperature, static characterization, switching loss",
author = "Gengyao Li and He Li and Amol Deshpande and Xiao Li and Longya Xu and Fang Luo and Jin Wang",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 4th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2016 ; Conference date: 07-11-2016 Through 09-11-2016",
year = "2016",
month = dec,
day = "27",
doi = "10.1109/WiPDA.2016.7799903",
language = "English",
series = "WiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "17--22",
booktitle = "WiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications",
}