@inproceedings{df655dac8ed9436c80265bc67bb89647,
title = "Connecting the physical and electrical properties of Hafnia-based RRAM",
abstract = "Simulations of the dynamic physical processes involved in HfO 2-based resistive-memory-operations are used to identify the dielectric structural properties responsible for device performance, while revealing that repeatable switching and higher HRS resistances are enabled by the oxide sub-stoichiometric composition. These simulations support a conductive-filament-formation physical model which is resulted from metal-oxygen bond breakage and subsequent oxygen ion out-diffusion, thus leaving behind an oxygen-vacancy rich region. The subsequent reset process is also shown to be controlled by re-oxidation of the filament tip.",
author = "B. Butcher and G. Bersuker and Gilmer, \{D. C.\} and L. Larcher and A. Padovani and L. Vandelli and R. Geer and Kirsch, \{P. D.\}",
year = "2013",
doi = "10.1109/IEDM.2013.6724682",
language = "English",
isbn = "9781479923076",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
pages = "22.2.1--22.2.4",
booktitle = "2013 IEEE International Electron Devices Meeting, IEDM 2013",
note = "2013 IEEE International Electron Devices Meeting, IEDM 2013 ; Conference date: 09-12-2013 Through 11-12-2013",
}