Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region

V. P. Evtikhiev; I. V. Kudryashov; E. Yu Kotel'nikov; V. E. Tokranov; A. N. Titkov; I. S. Tarasov; Zh I. Alferov

doi:10.1134/1.1187622

Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region

V. P. Evtikhiev
, I. V. Kudryashov
, E. Yu Kotel'nikov
, V. E. Tokranov
, A. N. Titkov
, I. S. Tarasov
, Zh I. Alferov

University at Albany Research Foundation

University at Albany

Ioffe Physical-Technical Institute

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The electroluminescence and stimulated emission of lasers with one layer of InAs quantum dots (QD's) grown in a single molecular-beam epitaxial process on vicinal GaAs(001) surfaces misoriented in the direction [010] by 2, 4 and 6° are investigated. It is discovered that an increase in the misorientation angle leads to a blue shift and a decrease in the full width at half maximum (FWHM) of the electroluminescence spectrum. This effect is attributed to a decrease in the size of the quantum dots and improvement in their size uniformity. A strong dependence of the threshold current density on the width of the spontaneous luminescence spectrum is discovered. The room-temperature threshold current density of the lasers with one layer of quantum dots and the spontaneous luminescence spectrum having the smallest FWHM (54 meV) equals 210 A/cm².

Original language	English
Pages (from-to)	1323-1327
Number of pages	5
Journal	Semiconductors
Volume	32
Issue number	12
DOIs	https://doi.org/10.1134/1.1187622
State	Published - Dec 1998

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Evtikhiev, V. P., Kudryashov, I. V., Kotel'nikov, E. Y., Tokranov, V. E., Titkov, A. N., Tarasov, I. S., & Alferov, Z. I. (1998). Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region. Semiconductors, 32(12), 1323-1327. https://doi.org/10.1134/1.1187622

@article{39e09a36f11242cb966be2f0d1953484,

title = "Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region",

abstract = "The electroluminescence and stimulated emission of lasers with one layer of InAs quantum dots (QD's) grown in a single molecular-beam epitaxial process on vicinal GaAs(001) surfaces misoriented in the direction [010] by 2, 4 and 6° are investigated. It is discovered that an increase in the misorientation angle leads to a blue shift and a decrease in the full width at half maximum (FWHM) of the electroluminescence spectrum. This effect is attributed to a decrease in the size of the quantum dots and improvement in their size uniformity. A strong dependence of the threshold current density on the width of the spontaneous luminescence spectrum is discovered. The room-temperature threshold current density of the lasers with one layer of quantum dots and the spontaneous luminescence spectrum having the smallest FWHM (54 meV) equals 210 A/cm2.",

author = "Evtikhiev, \{V. P.\} and Kudryashov, \{I. V.\} and Kotel'nikov, \{E. Yu\} and Tokranov, \{V. E.\} and Titkov, \{A. N.\} and Tarasov, \{I. S.\} and Alferov, \{Zh I.\}",

year = "1998",

month = dec,

doi = "10.1134/1.1187622",

language = "English",

volume = "32",

pages = "1323--1327",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Pleiades Publishing",

number = "12",

}

Evtikhiev, VP, Kudryashov, IV, Kotel'nikov, EY, Tokranov, VE, Titkov, AN, Tarasov, IS & Alferov, ZI 1998, 'Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region', Semiconductors, vol. 32, no. 12, pp. 1323-1327. https://doi.org/10.1134/1.1187622

Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region. / Evtikhiev, V. P.; Kudryashov, I. V.; Kotel'nikov, E. Yu et al.
In: Semiconductors, Vol. 32, No. 12, 12.1998, p. 1323-1327.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region

AU - Evtikhiev, V. P.

AU - Kudryashov, I. V.

AU - Kotel'nikov, E. Yu

AU - Tokranov, V. E.

AU - Titkov, A. N.

AU - Tarasov, I. S.

AU - Alferov, Zh I.

PY - 1998/12

Y1 - 1998/12

N2 - The electroluminescence and stimulated emission of lasers with one layer of InAs quantum dots (QD's) grown in a single molecular-beam epitaxial process on vicinal GaAs(001) surfaces misoriented in the direction [010] by 2, 4 and 6° are investigated. It is discovered that an increase in the misorientation angle leads to a blue shift and a decrease in the full width at half maximum (FWHM) of the electroluminescence spectrum. This effect is attributed to a decrease in the size of the quantum dots and improvement in their size uniformity. A strong dependence of the threshold current density on the width of the spontaneous luminescence spectrum is discovered. The room-temperature threshold current density of the lasers with one layer of quantum dots and the spontaneous luminescence spectrum having the smallest FWHM (54 meV) equals 210 A/cm2.

AB - The electroluminescence and stimulated emission of lasers with one layer of InAs quantum dots (QD's) grown in a single molecular-beam epitaxial process on vicinal GaAs(001) surfaces misoriented in the direction [010] by 2, 4 and 6° are investigated. It is discovered that an increase in the misorientation angle leads to a blue shift and a decrease in the full width at half maximum (FWHM) of the electroluminescence spectrum. This effect is attributed to a decrease in the size of the quantum dots and improvement in their size uniformity. A strong dependence of the threshold current density on the width of the spontaneous luminescence spectrum is discovered. The room-temperature threshold current density of the lasers with one layer of quantum dots and the spontaneous luminescence spectrum having the smallest FWHM (54 meV) equals 210 A/cm2.

UR - https://www.scopus.com/pages/publications/0007677696

U2 - 10.1134/1.1187622

DO - 10.1134/1.1187622

M3 - Article

SN - 1063-7826

VL - 32

SP - 1323

EP - 1327

JO - Semiconductors

JF - Semiconductors

IS - 12

ER -

Evtikhiev VP, Kudryashov IV, Kotel'nikov EY, Tokranov VE, Titkov AN, Tarasov IS et al. Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region. Semiconductors. 1998 Dec;32(12):1323-1327. doi: 10.1134/1.1187622

Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region

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