Continuous wave operated 3.2 μm type-I quantum-well diode lasers with the quinary waveguide layer

G. Belenky; L. Shterengas; D. Wang; G. Kipshidze; L. Vorobjev

doi:10.1088/0268-1242/24/11/115013

Continuous wave operated 3.2 μm type-I quantum-well diode lasers with the quinary waveguide layer

G. Belenky
, L. Shterengas
, D. Wang
, G. Kipshidze
, L. Vorobjev

Electrical Engineering

Stony Brook University

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

GaSb-based diode lasers with type-I quantum-well active region located either in the center of quinary AlInGaAsSb broadened waveguide or shifted to the p-cladding side were fabricated and characterized. Devices with narrower 'p-side waveguide' demonstrate better performance. We explain the phenomenon by reduced hole concentration in the waveguide region of the device. At 12 °C, lasers with optimized design generate above 65 mW of continuous wave output power at 3.2 μm.

Original language	English
Article number	115013
Journal	Semiconductor Science and Technology
Volume	24
Issue number	11
DOIs	https://doi.org/10.1088/0268-1242/24/11/115013
State	Published - 2009

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abstract = "GaSb-based diode lasers with type-I quantum-well active region located either in the center of quinary AlInGaAsSb broadened waveguide or shifted to the p-cladding side were fabricated and characterized. Devices with narrower 'p-side waveguide' demonstrate better performance. We explain the phenomenon by reduced hole concentration in the waveguide region of the device. At 12 °C, lasers with optimized design generate above 65 mW of continuous wave output power at 3.2 μm.",

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AU - Belenky, G.

AU - Shterengas, L.

AU - Wang, D.

AU - Kipshidze, G.

AU - Vorobjev, L.

PY - 2009

Y1 - 2009

N2 - GaSb-based diode lasers with type-I quantum-well active region located either in the center of quinary AlInGaAsSb broadened waveguide or shifted to the p-cladding side were fabricated and characterized. Devices with narrower 'p-side waveguide' demonstrate better performance. We explain the phenomenon by reduced hole concentration in the waveguide region of the device. At 12 °C, lasers with optimized design generate above 65 mW of continuous wave output power at 3.2 μm.

AB - GaSb-based diode lasers with type-I quantum-well active region located either in the center of quinary AlInGaAsSb broadened waveguide or shifted to the p-cladding side were fabricated and characterized. Devices with narrower 'p-side waveguide' demonstrate better performance. We explain the phenomenon by reduced hole concentration in the waveguide region of the device. At 12 °C, lasers with optimized design generate above 65 mW of continuous wave output power at 3.2 μm.

UR - https://www.scopus.com/pages/publications/70450073980

U2 - 10.1088/0268-1242/24/11/115013

DO - 10.1088/0268-1242/24/11/115013

M3 - Article

SN - 0268-1242

VL - 24

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 11

M1 - 115013

ER -

Continuous wave operated 3.2 μm type-I quantum-well diode lasers with the quinary waveguide layer

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