Continuous wave operation of diode lasers at 3.36 μm at 12 °c

L. Shterengas; G. Belenky; T. Hosoda; G. Kipshidze; S. Suchalkin

doi:10.1063/1.2953210

Continuous wave operation of diode lasers at 3.36 μm at 12 °c

L. Shterengas
, G. Belenky
, T. Hosoda
, G. Kipshidze
, S. Suchalkin

Electrical Engineering

Stony Brook University

Stony Brook University

Research output: Contribution to journal › Article › peer-review

102 Scopus citations

Abstract

GaSb-based type-I quantum-well diode lasers emitting at 3.36 μm at 12 °C with 15 mW of continuous wave output power are reported. Devices with two or four InGaAsSb compressively strained quantum wells and AlInGaAsSb quinternary barriers were fabricated and characterized. It was shown that increase in the quantum-well number led to improved laser differential gain and reduced threshold current.

Original language	English
Article number	011103
Journal	Applied Physics Letters
Volume	93
Issue number	1
DOIs	https://doi.org/10.1063/1.2953210
State	Published - 2008

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title = "Continuous wave operation of diode lasers at 3.36 μm at 12 °c",

abstract = "GaSb-based type-I quantum-well diode lasers emitting at 3.36 μm at 12 °C with 15 mW of continuous wave output power are reported. Devices with two or four InGaAsSb compressively strained quantum wells and AlInGaAsSb quinternary barriers were fabricated and characterized. It was shown that increase in the quantum-well number led to improved laser differential gain and reduced threshold current.",

author = "L. Shterengas and G. Belenky and T. Hosoda and G. Kipshidze and S. Suchalkin",

year = "2008",

doi = "10.1063/1.2953210",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

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T1 - Continuous wave operation of diode lasers at 3.36 μm at 12 °c

AU - Shterengas, L.

AU - Belenky, G.

AU - Hosoda, T.

AU - Kipshidze, G.

AU - Suchalkin, S.

PY - 2008

Y1 - 2008

N2 - GaSb-based type-I quantum-well diode lasers emitting at 3.36 μm at 12 °C with 15 mW of continuous wave output power are reported. Devices with two or four InGaAsSb compressively strained quantum wells and AlInGaAsSb quinternary barriers were fabricated and characterized. It was shown that increase in the quantum-well number led to improved laser differential gain and reduced threshold current.

AB - GaSb-based type-I quantum-well diode lasers emitting at 3.36 μm at 12 °C with 15 mW of continuous wave output power are reported. Devices with two or four InGaAsSb compressively strained quantum wells and AlInGaAsSb quinternary barriers were fabricated and characterized. It was shown that increase in the quantum-well number led to improved laser differential gain and reduced threshold current.

UR - https://www.scopus.com/pages/publications/47249144098

U2 - 10.1063/1.2953210

DO - 10.1063/1.2953210

M3 - Article

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 011103

ER -

Continuous wave operation of diode lasers at 3.36 μm at 12 °c

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