Control by an electric field of electron-hole separation in type-II heterostructures

Yu B. Vasilyev; V. A. Solov'ev; B. Ya Mel'tser; A. N. Semenov; M. V. Baidakova; S. V. Ivanov; P. S. Kop'ev; E. E. Mendez; Y. Lin

doi:10.1016/S0038-1098(02)00544-6

Control by an electric field of electron-hole separation in type-II heterostructures

Yu B. Vasilyev
, V. A. Solov'ev
, B. Ya Mel'tser
, A. N. Semenov
, M. V. Baidakova
, S. V. Ivanov
, P. S. Kop'ev
, E. E. Mendez
, Y. Lin

Physics and Astronomy

Stony Brook University

Ioffe Physical-Technical Institute
Stony Brook University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We report the realization of multi-period devices in which each period consists of two-dimensional electron and hole layers whose effective distance is controlled by an external bias. The current-voltage characteristics of devices based on InAs/Al_xGa_1-xAsSb/Al_0.1Ga_0.9AsSb type-II quantum well structures show a behavior that is consistent with a predicted enhancement of the radiative recombination in this type of devices at T = 77 K. We have found that increasing the number of periods and decreasing the operating temperature considerably improves the electrical performance of the devices.

Original language	English
Pages (from-to)	323-326
Number of pages	4
Journal	Solid State Communications
Volume	124
Issue number	9
DOIs	https://doi.org/10.1016/S0038-1098(02)00544-6
State	Published - Nov 2002

Keywords

A. Nanostructures
B. Epitaxy
D. Electronic transport

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10.1016/S0038-1098(02)00544-6

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title = "Control by an electric field of electron-hole separation in type-II heterostructures",

abstract = "We report the realization of multi-period devices in which each period consists of two-dimensional electron and hole layers whose effective distance is controlled by an external bias. The current-voltage characteristics of devices based on InAs/AlxGa1-xAsSb/Al0.1Ga0.9AsSb type-II quantum well structures show a behavior that is consistent with a predicted enhancement of the radiative recombination in this type of devices at T = 77 K. We have found that increasing the number of periods and decreasing the operating temperature considerably improves the electrical performance of the devices.",

keywords = "A. Nanostructures, B. Epitaxy, D. Electronic transport",

author = "Vasilyev, \{Yu B.\} and Solov'ev, \{V. A.\} and Mel'tser, \{B. Ya\} and Semenov, \{A. N.\} and Baidakova, \{M. V.\} and Ivanov, \{S. V.\} and Kop'ev, \{P. S.\} and Mendez, \{E. E.\} and Y. Lin",

year = "2002",

month = nov,

doi = "10.1016/S0038-1098(02)00544-6",

language = "English",

volume = "124",

pages = "323--326",

journal = "Solid State Communications",

issn = "0038-1098",

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TY - JOUR

T1 - Control by an electric field of electron-hole separation in type-II heterostructures

AU - Vasilyev, Yu B.

AU - Solov'ev, V. A.

AU - Mel'tser, B. Ya

AU - Semenov, A. N.

AU - Baidakova, M. V.

AU - Ivanov, S. V.

AU - Kop'ev, P. S.

AU - Mendez, E. E.

AU - Lin, Y.

PY - 2002/11

Y1 - 2002/11

N2 - We report the realization of multi-period devices in which each period consists of two-dimensional electron and hole layers whose effective distance is controlled by an external bias. The current-voltage characteristics of devices based on InAs/AlxGa1-xAsSb/Al0.1Ga0.9AsSb type-II quantum well structures show a behavior that is consistent with a predicted enhancement of the radiative recombination in this type of devices at T = 77 K. We have found that increasing the number of periods and decreasing the operating temperature considerably improves the electrical performance of the devices.

AB - We report the realization of multi-period devices in which each period consists of two-dimensional electron and hole layers whose effective distance is controlled by an external bias. The current-voltage characteristics of devices based on InAs/AlxGa1-xAsSb/Al0.1Ga0.9AsSb type-II quantum well structures show a behavior that is consistent with a predicted enhancement of the radiative recombination in this type of devices at T = 77 K. We have found that increasing the number of periods and decreasing the operating temperature considerably improves the electrical performance of the devices.

KW - A. Nanostructures

KW - B. Epitaxy

KW - D. Electronic transport

UR - https://www.scopus.com/pages/publications/0036853517

U2 - 10.1016/S0038-1098(02)00544-6

DO - 10.1016/S0038-1098(02)00544-6

M3 - Article

SN - 0038-1098

VL - 124

SP - 323

EP - 326

JO - Solid State Communications

JF - Solid State Communications

IS - 9

ER -

Control by an electric field of electron-hole separation in type-II heterostructures

Abstract

Keywords

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