Cryogenic operation of a 24 GHz MMIC SiGe HBT medium power amplifier

Qin Guoxuan; Jiang Ningyue; Seo Jung-Hun; Namki Cho; George E. Ponchak; Daniel Van Der Weide; Pingxi Ma; Scott Stetson; Marco Racanelli; Ma Zhenqiang

doi:10.1088/0268-1242/25/12/125002

Cryogenic operation of a 24 GHz MMIC SiGe HBT medium power amplifier

Qin Guoxuan
, Jiang Ningyue
, Seo Jung-Hun
, Namki Cho
, George E. Ponchak
, Daniel Van Der Weide
, Pingxi Ma
, Scott Stetson
, Marco Racanelli
, Ma Zhenqiang

Department of Materials Design and Innovation

University at Buffalo

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The performance of a SiGe heterojunction bipolar transistor (HBT) millimetre-wave power amplifier (PA) operating at cryogenic temperature was reported and analysed for the first time. A 24 GHz two-stage medium PA employing common-emitter and common-base SiGe power HBTs in the first and the second stage, respectively, showed a significant power gain increase at 77 K in comparison with that measured at room temperature. Detailed analyses indicate that cryogenic operation of SiGe HBT-based PAs mainly affects (improves) the performance of the SiGe HBTs in the circuits due to transconductance enhancement through magnified, favourable changes of SiGe bandgap due to cooling (ΔE_g/kT) and minimized thermal effects, with little influence on the passive components of the circuits.

Original language	English
Article number	125002
Journal	Semiconductor Science and Technology
Volume	25
Issue number	12
DOIs	https://doi.org/10.1088/0268-1242/25/12/125002
State	Published - Dec 2010

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title = "Cryogenic operation of a 24 GHz MMIC SiGe HBT medium power amplifier",

abstract = "The performance of a SiGe heterojunction bipolar transistor (HBT) millimetre-wave power amplifier (PA) operating at cryogenic temperature was reported and analysed for the first time. A 24 GHz two-stage medium PA employing common-emitter and common-base SiGe power HBTs in the first and the second stage, respectively, showed a significant power gain increase at 77 K in comparison with that measured at room temperature. Detailed analyses indicate that cryogenic operation of SiGe HBT-based PAs mainly affects (improves) the performance of the SiGe HBTs in the circuits due to transconductance enhancement through magnified, favourable changes of SiGe bandgap due to cooling (ΔEg/kT) and minimized thermal effects, with little influence on the passive components of the circuits.",

author = "Qin Guoxuan and Jiang Ningyue and Seo Jung-Hun and Namki Cho and Ponchak, \{George E.\} and \{Van Der Weide\}, Daniel and Pingxi Ma and Scott Stetson and Marco Racanelli and Ma Zhenqiang",

year = "2010",

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doi = "10.1088/0268-1242/25/12/125002",

language = "English",

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TY - JOUR

T1 - Cryogenic operation of a 24 GHz MMIC SiGe HBT medium power amplifier

AU - Guoxuan, Qin

AU - Ningyue, Jiang

AU - Jung-Hun, Seo

AU - Cho, Namki

AU - Ponchak, George E.

AU - Van Der Weide, Daniel

AU - Ma, Pingxi

AU - Stetson, Scott

AU - Racanelli, Marco

AU - Zhenqiang, Ma

PY - 2010/12

Y1 - 2010/12

N2 - The performance of a SiGe heterojunction bipolar transistor (HBT) millimetre-wave power amplifier (PA) operating at cryogenic temperature was reported and analysed for the first time. A 24 GHz two-stage medium PA employing common-emitter and common-base SiGe power HBTs in the first and the second stage, respectively, showed a significant power gain increase at 77 K in comparison with that measured at room temperature. Detailed analyses indicate that cryogenic operation of SiGe HBT-based PAs mainly affects (improves) the performance of the SiGe HBTs in the circuits due to transconductance enhancement through magnified, favourable changes of SiGe bandgap due to cooling (ΔEg/kT) and minimized thermal effects, with little influence on the passive components of the circuits.

AB - The performance of a SiGe heterojunction bipolar transistor (HBT) millimetre-wave power amplifier (PA) operating at cryogenic temperature was reported and analysed for the first time. A 24 GHz two-stage medium PA employing common-emitter and common-base SiGe power HBTs in the first and the second stage, respectively, showed a significant power gain increase at 77 K in comparison with that measured at room temperature. Detailed analyses indicate that cryogenic operation of SiGe HBT-based PAs mainly affects (improves) the performance of the SiGe HBTs in the circuits due to transconductance enhancement through magnified, favourable changes of SiGe bandgap due to cooling (ΔEg/kT) and minimized thermal effects, with little influence on the passive components of the circuits.

UR - https://www.scopus.com/pages/publications/78650477647

U2 - 10.1088/0268-1242/25/12/125002

DO - 10.1088/0268-1242/25/12/125002

M3 - Article

SN - 0268-1242

VL - 25

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 12

M1 - 125002

ER -

Cryogenic operation of a 24 GHz MMIC SiGe HBT medium power amplifier

Abstract

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