CRYOGENIC-PRESSURE LUMINESCENCE STUDIES OF DEFECT STRUCTURE IN AMORPHOUS AND CRYSTALLINE CHALCOGENIDE SEMICONDUCTORS.

B. A. Weinstein

CRYOGENIC-PRESSURE LUMINESCENCE STUDIES OF DEFECT STRUCTURE IN AMORPHOUS AND CRYSTALLINE CHALCOGENIDE SEMICONDUCTORS.

B. A. Weinstein

Physics

University at Buffalo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Intrinsic defect photoluminescence is measured in crystalline As//2S//3 and glassy As//2SeS//2 under hydrostatic pressure up to 110 kbar at 13K. The Stokes shift decreases rapidly, breaking the rule of mid-bandgap emission. A new configuration coordinate model explains this effect in terms of the decreasing spacing between layers (crystal), layer-like units (glass). A general picture of the defect structure results.

Original language	English
Title of host publication	Unknown Host Publication Title
Publisher	D. Reidel Publ Co
Pages	285-290
Number of pages	6
ISBN (Print)	9027718970
State	Published - 1985

Cite this

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title = "CRYOGENIC-PRESSURE LUMINESCENCE STUDIES OF DEFECT STRUCTURE IN AMORPHOUS AND CRYSTALLINE CHALCOGENIDE SEMICONDUCTORS.",

abstract = "Intrinsic defect photoluminescence is measured in crystalline As//2S//3 and glassy As//2SeS//2 under hydrostatic pressure up to 110 kbar at 13K. The Stokes shift decreases rapidly, breaking the rule of mid-bandgap emission. A new configuration coordinate model explains this effect in terms of the decreasing spacing between layers (crystal), layer-like units (glass). A general picture of the defect structure results.",

author = "Weinstein, \{B. A.\}",

year = "1985",

language = "English",

isbn = "9027718970",

pages = "285--290",

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publisher = "D. Reidel Publ Co",

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T1 - CRYOGENIC-PRESSURE LUMINESCENCE STUDIES OF DEFECT STRUCTURE IN AMORPHOUS AND CRYSTALLINE CHALCOGENIDE SEMICONDUCTORS.

AU - Weinstein, B. A.

PY - 1985

Y1 - 1985

N2 - Intrinsic defect photoluminescence is measured in crystalline As//2S//3 and glassy As//2SeS//2 under hydrostatic pressure up to 110 kbar at 13K. The Stokes shift decreases rapidly, breaking the rule of mid-bandgap emission. A new configuration coordinate model explains this effect in terms of the decreasing spacing between layers (crystal), layer-like units (glass). A general picture of the defect structure results.

AB - Intrinsic defect photoluminescence is measured in crystalline As//2S//3 and glassy As//2SeS//2 under hydrostatic pressure up to 110 kbar at 13K. The Stokes shift decreases rapidly, breaking the rule of mid-bandgap emission. A new configuration coordinate model explains this effect in terms of the decreasing spacing between layers (crystal), layer-like units (glass). A general picture of the defect structure results.

UR - https://www.scopus.com/pages/publications/0022319252

M3 - Conference contribution

SN - 9027718970

SP - 285

EP - 290

BT - Unknown Host Publication Title

PB - D. Reidel Publ Co

ER -

CRYOGENIC-PRESSURE LUMINESCENCE STUDIES OF DEFECT STRUCTURE IN AMORPHOUS AND CRYSTALLINE CHALCOGENIDE SEMICONDUCTORS.

Abstract

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