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Current transport mechanisms in CuIn1-xGaxSe2 and CIS thin-film solar cells on flexible stainless steel substrates

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4 Scopus citations

Abstract

Copper indium gallium selenide (CIGS) solar cells on thin film stainless steel substrates were evaluated by current-voltage-temperature (IVT) from 150 K-350 K to determine current transport mechanisms. Both dark and photo data at reverse and low forward voltages exhibited tunneling-like behavior. At intermediate forward voltages, diffusion or thermionic emission are suggested by an ideality factor close to 1.0. At higher currents and voltages there is a trend towards recombination or space change limited behavior.

Original languageEnglish
Pages (from-to)H3101-H3105
JournalMaterials Research Society Symposium - Proceedings
Volume668
DOIs
StatePublished - 2001
EventII - VI Compound Semiconductor Photovoltaic Materials - San Francisco, CA, United States
Duration: Apr 16 2001Apr 20 2001

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