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Decomposition and electro-physical model creation of the CREE 1200V, 50A 3-Ph SiC module

  • North Carolina State University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

27 Scopus citations

Abstract

The CREE 1200V/50A, 25mω 6-Pack SiC MOSFET module (CCS050M12CM2) is decomposed into a full 3D CAD model, and materials identified, for use in electrical circuit and multi-physics simulations. A reverse engineering technique is first developed, outlined, and then demonstrated on the CREE module. The ANSYS Q3D Extractor is applied to the 3D CAD model where electrical, lumped parameter, parasitic circuit elements are determined. The model is also analyzed with a multi-physics simulator to provide in-situ thermal maps of the baseplate surface for application scenarios, e.g. with a thermal interface material and pin fin heat sink to capture the thermal spreading from junction to case. The complete model is made open source and freely distributed for use by the reader.

Original languageEnglish
Title of host publication2016 IEEE Applied Power Electronics Conference and Exposition, APEC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2141-2146
Number of pages6
ISBN (Electronic)9781467383936
DOIs
StatePublished - May 10 2016
Event31st Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2016 - Long Beach, United States
Duration: Mar 20 2016Mar 24 2016

Publication series

NameConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
Volume2016-May

Conference

Conference31st Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2016
Country/TerritoryUnited States
CityLong Beach
Period03/20/1603/24/16

Keywords

  • CREE Module
  • Lumped Parameter Model
  • Parasitic Impedances
  • Thermal Model

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