Deep acceptors in undoped GaN

M. A. Reshchikov; F. Shahedipour; R. Y. Korotkov; M. P. Ulmer; B. W. Wessels

doi:10.1016/S0921-4526(99)00417-2

Deep acceptors in undoped GaN

M. A. Reshchikov
, F. Shahedipour
, R. Y. Korotkov
, M. P. Ulmer
, B. W. Wessels

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Northwestern University
Virginia Commonwealth University
Ioffe Physical-Technical Institute

Research output: Contribution to journal › Conference article › peer-review

30 Scopus citations

Abstract

Broad photoluminescence bands with maxima at 2.2, 2.5 and 2.9 eV in undoped GaN are studied. The bands are related to three deep acceptors, which are characterized by strong electron-phonon coupling. Vibrational properties of the defects are reported.

Original language	English
Pages (from-to)	105-108
Number of pages	4
Journal	Physica B: Physics of Condensed Matter
Volume	273-274
DOIs	https://doi.org/10.1016/S0921-4526(99)00417-2
State	Published - Dec 15 1999
Event	Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA Duration: Jul 26 1999 → Jul 30 1999

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10.1016/S0921-4526(99)00417-2

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title = "Deep acceptors in undoped GaN",

abstract = "Broad photoluminescence bands with maxima at 2.2, 2.5 and 2.9 eV in undoped GaN are studied. The bands are related to three deep acceptors, which are characterized by strong electron-phonon coupling. Vibrational properties of the defects are reported.",

author = "Reshchikov, \{M. A.\} and F. Shahedipour and Korotkov, \{R. Y.\} and Ulmer, \{M. P.\} and Wessels, \{B. W.\}",

year = "1999",

month = dec,

day = "15",

doi = "10.1016/S0921-4526(99)00417-2",

language = "English",

volume = "273-274",

pages = "105--108",

journal = "Physica B: Physics of Condensed Matter",

issn = "0921-4526",

note = "Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) ; Conference date: 26-07-1999 Through 30-07-1999",

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TY - JOUR

T1 - Deep acceptors in undoped GaN

AU - Reshchikov, M. A.

AU - Shahedipour, F.

AU - Korotkov, R. Y.

AU - Ulmer, M. P.

AU - Wessels, B. W.

PY - 1999/12/15

Y1 - 1999/12/15

N2 - Broad photoluminescence bands with maxima at 2.2, 2.5 and 2.9 eV in undoped GaN are studied. The bands are related to three deep acceptors, which are characterized by strong electron-phonon coupling. Vibrational properties of the defects are reported.

AB - Broad photoluminescence bands with maxima at 2.2, 2.5 and 2.9 eV in undoped GaN are studied. The bands are related to three deep acceptors, which are characterized by strong electron-phonon coupling. Vibrational properties of the defects are reported.

UR - https://www.scopus.com/pages/publications/0033340315

U2 - 10.1016/S0921-4526(99)00417-2

DO - 10.1016/S0921-4526(99)00417-2

M3 - Conference article

SN - 0921-4526

VL - 273-274

SP - 105

EP - 108

JO - Physica B: Physics of Condensed Matter

JF - Physica B: Physics of Condensed Matter

T2 - Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20)

Y2 - 26 July 1999 through 30 July 1999

ER -

Deep acceptors in undoped GaN

Abstract

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