Defect passivation with fluorine in a TaxCy/High-K gate stack for enhanced device threshold voltage stability and performance

H. H. Tseng; P. J. Tobin; E. A. Hebert; S. Kalpat; M. E. Ramón; L. Fonseca; Z. X. Jiang; J. K. Schaeffer; R. I. Hegde; D. H. Triyoso; D. C. Gilmer; W. J. Taylor; C. C. Capasso; O. Adetutu; D. Sing; J. Conner; E. Luckowski; B. W. Chan; A. Haggag; S. Backer; R. Noble; M. Jahanbani; Y. H. Chiu; B. E. White

Defect passivation with fluorine in a Ta_xC_y/High-K gate stack for enhanced device threshold voltage stability and performance

H. H. Tseng
, P. J. Tobin
, E. A. Hebert
, S. Kalpat
, M. E. Ramón
, L. Fonseca
, Z. X. Jiang
, J. K. Schaeffer
, R. I. Hegde
, D. H. Triyoso
, D. C. Gilmer
, W. J. Taylor
, C. C. Capasso
, O. Adetutu
, D. Sing
, J. Conner
, E. Luckowski
, B. W. Chan
, A. Haggag
, S. Backer

R. Noble, M. Jahanbani, Y. H. Chiu, B. E. White

Physics

Binghamton University

Freescale Semiconductor
Taiwan Semiconductor Manufacturing Company

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

20 Scopus citations

Abstract

Using a novel fluorinated Ta_xC_y/High-K gate stack, we show breakthrough device reliability and performance improvements. This is a critical result since threshold voltage instability may be a fundamental problem and performance degradation for High-K is a concern. The novel fluorinated gate stack device exceeds the PBTI and NBTI targets with sufficient margin and has electron mobility comparable to the best polySi/SiON device on bulk Si reported so far.

Original language	English
Title of host publication	IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages	696-699
Number of pages	4
State	Published - 2005
Event	IEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States Duration: Dec 5 2005 → Dec 7 2005

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2005

Conference

Conference	IEEE International Electron Devices Meeting, 2005 IEDM
Country/Territory	United States
City	Washington, DC, MD
Period	12/5/05 → 12/7/05

Cite this

Tseng, H. H., Tobin, P. J., Hebert, E. A., Kalpat, S., Ramón, M. E., Fonseca, L., Jiang, Z. X., Schaeffer, J. K., Hegde, R. I., Triyoso, D. H., Gilmer, D. C., Taylor, W. J., Capasso, C. C., Adetutu, O., Sing, D., Conner, J., Luckowski, E., Chan, B. W., Haggag, A., ... White, B. E. (2005). Defect passivation with fluorine in a Ta_xC_y/High-K gate stack for enhanced device threshold voltage stability and performance. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest (pp. 696-699). Article 1609447 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

@inproceedings{e9e1fbb8eaae45ada34f051dba0e9df5,

title = "Defect passivation with fluorine in a TaxCy/High-K gate stack for enhanced device threshold voltage stability and performance",

abstract = "Using a novel fluorinated TaxCy/High-K gate stack, we show breakthrough device reliability and performance improvements. This is a critical result since threshold voltage instability may be a fundamental problem and performance degradation for High-K is a concern. The novel fluorinated gate stack device exceeds the PBTI and NBTI targets with sufficient margin and has electron mobility comparable to the best polySi/SiON device on bulk Si reported so far.",

author = "Tseng, \{H. H.\} and Tobin, \{P. J.\} and Hebert, \{E. A.\} and S. Kalpat and Ram{\'o}n, \{M. E.\} and L. Fonseca and Jiang, \{Z. X.\} and Schaeffer, \{J. K.\} and Hegde, \{R. I.\} and Triyoso, \{D. H.\} and Gilmer, \{D. C.\} and Taylor, \{W. J.\} and Capasso, \{C. C.\} and O. Adetutu and D. Sing and J. Conner and E. Luckowski and Chan, \{B. W.\} and A. Haggag and S. Backer and R. Noble and M. Jahanbani and Chiu, \{Y. H.\} and White, \{B. E.\}",

year = "2005",

language = "English",

isbn = "078039268X",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "696--699",

booktitle = "IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest",

note = "IEEE International Electron Devices Meeting, 2005 IEDM ; Conference date: 05-12-2005 Through 07-12-2005",

}

Tseng, HH, Tobin, PJ, Hebert, EA, Kalpat, S, Ramón, ME, Fonseca, L, Jiang, ZX, Schaeffer, JK, Hegde, RI, Triyoso, DH, Gilmer, DC, Taylor, WJ, Capasso, CC, Adetutu, O, Sing, D, Conner, J, Luckowski, E, Chan, BW, Haggag, A, Backer, S, Noble, R, Jahanbani, M, Chiu, YH & White, BE 2005, Defect passivation with fluorine in a Ta_xC_y/High-K gate stack for enhanced device threshold voltage stability and performance. in IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest., 1609447, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2005, pp. 696-699, IEEE International Electron Devices Meeting, 2005 IEDM, Washington, DC, MD, United States, 12/5/05.

Defect passivation with fluorine in a Ta_xC_y/High-K gate stack for enhanced device threshold voltage stability and performance. / Tseng, H. H.; Tobin, P. J.; Hebert, E. A. et al.
IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. 2005. p. 696-699 1609447 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Defect passivation with fluorine in a TaxCy/High-K gate stack for enhanced device threshold voltage stability and performance

AU - Tseng, H. H.

AU - Tobin, P. J.

AU - Hebert, E. A.

AU - Kalpat, S.

AU - Ramón, M. E.

AU - Fonseca, L.

AU - Jiang, Z. X.

AU - Schaeffer, J. K.

AU - Hegde, R. I.

AU - Triyoso, D. H.

AU - Gilmer, D. C.

AU - Taylor, W. J.

AU - Capasso, C. C.

AU - Adetutu, O.

AU - Sing, D.

AU - Conner, J.

AU - Luckowski, E.

AU - Chan, B. W.

AU - Haggag, A.

AU - Backer, S.

AU - Noble, R.

AU - Jahanbani, M.

AU - Chiu, Y. H.

AU - White, B. E.

PY - 2005

Y1 - 2005

N2 - Using a novel fluorinated TaxCy/High-K gate stack, we show breakthrough device reliability and performance improvements. This is a critical result since threshold voltage instability may be a fundamental problem and performance degradation for High-K is a concern. The novel fluorinated gate stack device exceeds the PBTI and NBTI targets with sufficient margin and has electron mobility comparable to the best polySi/SiON device on bulk Si reported so far.

AB - Using a novel fluorinated TaxCy/High-K gate stack, we show breakthrough device reliability and performance improvements. This is a critical result since threshold voltage instability may be a fundamental problem and performance degradation for High-K is a concern. The novel fluorinated gate stack device exceeds the PBTI and NBTI targets with sufficient margin and has electron mobility comparable to the best polySi/SiON device on bulk Si reported so far.

UR - https://www.scopus.com/pages/publications/33847750682

M3 - Conference contribution

SN - 078039268X

SN - 9780780392687

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 696

EP - 699

BT - IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest

T2 - IEEE International Electron Devices Meeting, 2005 IEDM

Y2 - 5 December 2005 through 7 December 2005

ER -

Defect passivation with fluorine in a Ta_xC_y/High-K gate stack for enhanced device threshold voltage stability and performance

Abstract

Publication series

Conference

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