Design and characterization of GaN p-i-n diodes for betavoltaic devices

Muhammad R. Khan; Joshua R. Smith; Randy P. Tompkins; Stephen Kelley; Marc Litz; John Russo; Jeff Leathersich; Fatemeh (Shadi) Shahedipour-Sandvik; Kenneth A. Jones; Agis Iliadis

doi:10.1016/j.sse.2017.06.010

Design and characterization of GaN p-i-n diodes for betavoltaic devices

Muhammad R. Khan
, Joshua R. Smith
, Randy P. Tompkins
, Stephen Kelley
, Marc Litz
, John Russo
, Jeff Leathersich
, Fatemeh (Shadi) Shahedipour-Sandvik
, Kenneth A. Jones
, Agis Iliadis

Office of Research, Innovation, and Economic Development

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University of Maryland, College Park
Xometry Bethesda
U.S. Army Research Laboratory
SUNY Polytechnic Institute

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

The performance of gallium nitride (GaN) p-i-n diodes were investigated for use as a betavoltaic device. Dark IV measurements showed a turn on-voltage of approximately 3.2 V, specific-on-resistance of 15.1 mΩ cm² and a reverse leakage current of −0.14 mA/cm² at −10 V. A clear photo-response was observed when IV curves were measured under a light source at a wavelength of 310 nm (4.0 eV). In addition, GaN p-i-n diodes were tested under an electron-beam in order to simulate common beta radiation sources ranging from that of ³H (5.6 keV average) to ⁶³Ni (17 keV average). From this data, we estimated output powers of 53 nW and 750 nW with overall efficiencies of 0.96% and 4.4% for our device at incident electron energies of 5.6 keV and 17 keV corresponding to ³H and ⁶³Ni beta sources respectively.

Original language	English
Pages (from-to)	24-29
Number of pages	6
Journal	Solid-State Electronics
Volume	136
DOIs	https://doi.org/10.1016/j.sse.2017.06.010
State	Published - Oct 2017

Keywords

Betavoltaic devices
GaN p-i-n diodes
Nickel-63
Tritium

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10.1016/j.sse.2017.06.010

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@article{4c977eac2bfa4943a840fbab83705e98,

title = "Design and characterization of GaN p-i-n diodes for betavoltaic devices",

abstract = "The performance of gallium nitride (GaN) p-i-n diodes were investigated for use as a betavoltaic device. Dark IV measurements showed a turn on-voltage of approximately 3.2 V, specific-on-resistance of 15.1 mΩ cm2 and a reverse leakage current of −0.14 mA/cm2 at −10 V. A clear photo-response was observed when IV curves were measured under a light source at a wavelength of 310 nm (4.0 eV). In addition, GaN p-i-n diodes were tested under an electron-beam in order to simulate common beta radiation sources ranging from that of 3H (5.6 keV average) to 63Ni (17 keV average). From this data, we estimated output powers of 53 nW and 750 nW with overall efficiencies of 0.96\% and 4.4\% for our device at incident electron energies of 5.6 keV and 17 keV corresponding to 3H and 63Ni beta sources respectively.",

keywords = "Betavoltaic devices, GaN p-i-n diodes, Nickel-63, Tritium",

author = "Khan, \{Muhammad R.\} and Smith, \{Joshua R.\} and Tompkins, \{Randy P.\} and Stephen Kelley and Marc Litz and John Russo and Jeff Leathersich and Shahedipour-Sandvik, \{Fatemeh (Shadi)\} and Jones, \{Kenneth A.\} and Agis Iliadis",

note = "Publisher Copyright: {\textcopyright} 2017",

year = "2017",

month = oct,

doi = "10.1016/j.sse.2017.06.010",

language = "English",

volume = "136",

pages = "24--29",

journal = "Solid-State Electronics",

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T1 - Design and characterization of GaN p-i-n diodes for betavoltaic devices

AU - Khan, Muhammad R.

AU - Smith, Joshua R.

AU - Tompkins, Randy P.

AU - Kelley, Stephen

AU - Litz, Marc

AU - Russo, John

AU - Leathersich, Jeff

AU - Shahedipour-Sandvik, Fatemeh (Shadi)

AU - Jones, Kenneth A.

AU - Iliadis, Agis

PY - 2017/10

Y1 - 2017/10

N2 - The performance of gallium nitride (GaN) p-i-n diodes were investigated for use as a betavoltaic device. Dark IV measurements showed a turn on-voltage of approximately 3.2 V, specific-on-resistance of 15.1 mΩ cm2 and a reverse leakage current of −0.14 mA/cm2 at −10 V. A clear photo-response was observed when IV curves were measured under a light source at a wavelength of 310 nm (4.0 eV). In addition, GaN p-i-n diodes were tested under an electron-beam in order to simulate common beta radiation sources ranging from that of 3H (5.6 keV average) to 63Ni (17 keV average). From this data, we estimated output powers of 53 nW and 750 nW with overall efficiencies of 0.96% and 4.4% for our device at incident electron energies of 5.6 keV and 17 keV corresponding to 3H and 63Ni beta sources respectively.

AB - The performance of gallium nitride (GaN) p-i-n diodes were investigated for use as a betavoltaic device. Dark IV measurements showed a turn on-voltage of approximately 3.2 V, specific-on-resistance of 15.1 mΩ cm2 and a reverse leakage current of −0.14 mA/cm2 at −10 V. A clear photo-response was observed when IV curves were measured under a light source at a wavelength of 310 nm (4.0 eV). In addition, GaN p-i-n diodes were tested under an electron-beam in order to simulate common beta radiation sources ranging from that of 3H (5.6 keV average) to 63Ni (17 keV average). From this data, we estimated output powers of 53 nW and 750 nW with overall efficiencies of 0.96% and 4.4% for our device at incident electron energies of 5.6 keV and 17 keV corresponding to 3H and 63Ni beta sources respectively.

KW - Betavoltaic devices

KW - GaN p-i-n diodes

KW - Nickel-63

KW - Tritium

UR - https://www.scopus.com/pages/publications/85021808836

U2 - 10.1016/j.sse.2017.06.010

DO - 10.1016/j.sse.2017.06.010

M3 - Article

SN - 0038-1101

VL - 136

SP - 24

EP - 29

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Design and characterization of GaN p-i-n diodes for betavoltaic devices

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Keywords

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