Design, Fabrication and Testing of 3.3 kV/200A SiC Half-bridge Power Module

Yang Li; Mustafeez Hassan; Yuxuan Wu; Asif Imran Emon; Yang Xie; Shiyue Deng; Fang Luo; Amol Deshpande; Zhao Yuan; Michael McKeown

doi:10.1109/APEC43580.2023.10131664

Design, Fabrication and Testing of 3.3 kV/200A SiC Half-bridge Power Module

Yang Li
, Mustafeez Hassan
, Yuxuan Wu
, Asif Imran Emon
, Yang Xie
, Shiyue Deng
, Fang Luo
, Amol Deshpande
, Zhao Yuan
, Michael McKeown

Electrical Engineering

Stony Brook University

Stony Brook University
University of Arkansas, Fayetteville
Hesse Mechatronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

While commercially released SiC discrete MOSFETs and its power modules are dominated by intermediate voltages from 600 V to 1.7 kV, high voltage (>3 kV) SiC products are still rare for public access especially in the form of power modules. In this paper we started with an introduction of a self-designed 3.3 kV, 200 A SiC half-bridge power module conformed to XHP package outline, followed by an estimation of its parasitic inductance and thermal performance. Its feasibility for in-house fabrication, along with its capability to stand high voltage without partial discharge, plus an initial functionality check under double pulse test (DPT) are also evaluated.

Original language	English
Title of host publication	APEC 2023 - 38th Annual IEEE Applied Power Electronics Conference and Exposition
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	331-335
Number of pages	5
ISBN (Electronic)	9781665475396
DOIs	https://doi.org/10.1109/APEC43580.2023.10131664
State	Published - 2023
Event	38th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2023 - Orlando, United States Duration: Mar 19 2023 → Mar 23 2023

Publication series

Name	Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
Volume	2023-March

Conference

Conference	38th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2023
Country/Territory	United States
City	Orlando
Period	03/19/23 → 03/23/23

Keywords

3.3 kV power module design
SiC MOSFET

Access to Document

10.1109/APEC43580.2023.10131664

Cite this

Li, Y., Hassan, M., Wu, Y., Emon, A. I., Xie, Y., Deng, S., Luo, F., Deshpande, A., Yuan, Z., & McKeown, M. (2023). Design, Fabrication and Testing of 3.3 kV/200A SiC Half-bridge Power Module. In APEC 2023 - 38th Annual IEEE Applied Power Electronics Conference and Exposition (pp. 331-335). (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; Vol. 2023-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APEC43580.2023.10131664

Li, Yang ; Hassan, Mustafeez ; Wu, Yuxuan et al. / Design, Fabrication and Testing of 3.3 kV/200A SiC Half-bridge Power Module. APEC 2023 - 38th Annual IEEE Applied Power Electronics Conference and Exposition. Institute of Electrical and Electronics Engineers Inc., 2023. pp. 331-335 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC).

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title = "Design, Fabrication and Testing of 3.3 kV/200A SiC Half-bridge Power Module",

abstract = "While commercially released SiC discrete MOSFETs and its power modules are dominated by intermediate voltages from 600 V to 1.7 kV, high voltage (>3 kV) SiC products are still rare for public access especially in the form of power modules. In this paper we started with an introduction of a self-designed 3.3 kV, 200 A SiC half-bridge power module conformed to XHP package outline, followed by an estimation of its parasitic inductance and thermal performance. Its feasibility for in-house fabrication, along with its capability to stand high voltage without partial discharge, plus an initial functionality check under double pulse test (DPT) are also evaluated.",

keywords = "3.3 kV power module design, SiC MOSFET",

author = "Yang Li and Mustafeez Hassan and Yuxuan Wu and Emon, \{Asif Imran\} and Yang Xie and Shiyue Deng and Fang Luo and Amol Deshpande and Zhao Yuan and Michael McKeown",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 38th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2023 ; Conference date: 19-03-2023 Through 23-03-2023",

year = "2023",

doi = "10.1109/APEC43580.2023.10131664",

language = "English",

series = "Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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}

Li, Y, Hassan, M, Wu, Y, Emon, AI, Xie, Y, Deng, S, Luo, F, Deshpande, A, Yuan, Z & McKeown, M 2023, Design, Fabrication and Testing of 3.3 kV/200A SiC Half-bridge Power Module. in APEC 2023 - 38th Annual IEEE Applied Power Electronics Conference and Exposition. Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, vol. 2023-March, Institute of Electrical and Electronics Engineers Inc., pp. 331-335, 38th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2023, Orlando, United States, 03/19/23. https://doi.org/10.1109/APEC43580.2023.10131664

Design, Fabrication and Testing of 3.3 kV/200A SiC Half-bridge Power Module. / Li, Yang; Hassan, Mustafeez; Wu, Yuxuan et al.
APEC 2023 - 38th Annual IEEE Applied Power Electronics Conference and Exposition. Institute of Electrical and Electronics Engineers Inc., 2023. p. 331-335 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; Vol. 2023-March).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Design, Fabrication and Testing of 3.3 kV/200A SiC Half-bridge Power Module

AU - Li, Yang

AU - Hassan, Mustafeez

AU - Wu, Yuxuan

AU - Emon, Asif Imran

AU - Xie, Yang

AU - Deng, Shiyue

AU - Luo, Fang

AU - Deshpande, Amol

AU - Yuan, Zhao

AU - McKeown, Michael

PY - 2023

Y1 - 2023

N2 - While commercially released SiC discrete MOSFETs and its power modules are dominated by intermediate voltages from 600 V to 1.7 kV, high voltage (>3 kV) SiC products are still rare for public access especially in the form of power modules. In this paper we started with an introduction of a self-designed 3.3 kV, 200 A SiC half-bridge power module conformed to XHP package outline, followed by an estimation of its parasitic inductance and thermal performance. Its feasibility for in-house fabrication, along with its capability to stand high voltage without partial discharge, plus an initial functionality check under double pulse test (DPT) are also evaluated.

AB - While commercially released SiC discrete MOSFETs and its power modules are dominated by intermediate voltages from 600 V to 1.7 kV, high voltage (>3 kV) SiC products are still rare for public access especially in the form of power modules. In this paper we started with an introduction of a self-designed 3.3 kV, 200 A SiC half-bridge power module conformed to XHP package outline, followed by an estimation of its parasitic inductance and thermal performance. Its feasibility for in-house fabrication, along with its capability to stand high voltage without partial discharge, plus an initial functionality check under double pulse test (DPT) are also evaluated.

KW - 3.3 kV power module design

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DO - 10.1109/APEC43580.2023.10131664

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BT - APEC 2023 - 38th Annual IEEE Applied Power Electronics Conference and Exposition

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T2 - 38th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2023

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Li Y, Hassan M, Wu Y, Emon AI, Xie Y, Deng S et al. Design, Fabrication and Testing of 3.3 kV/200A SiC Half-bridge Power Module. In APEC 2023 - 38th Annual IEEE Applied Power Electronics Conference and Exposition. Institute of Electrical and Electronics Engineers Inc. 2023. p. 331-335. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC). doi: 10.1109/APEC43580.2023.10131664

Design, Fabrication and Testing of 3.3 kV/200A SiC Half-bridge Power Module

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