Design issues for SiGe heterojunction bipolar transistors

J. M.C. Stork; G. L. Patton; E. F. Crabbe; D. L. Harame; B. S. Meyerson; S. S. Iyer; E. Ganin

Design issues for SiGe heterojunction bipolar transistors

J. M.C. Stork
, G. L. Patton
, E. F. Crabbe
, D. L. Harame
, B. S. Meyerson
, S. S. Iyer
, E. Ganin

NY Creates Research Foundation

NY Creates

IBM

Research output: Contribution to conference › Paper › peer-review

6 Scopus citations

Abstract

Recent progress in the growth of strained SiGe epitaxial layers, demonstrating the feasibility of silicon-based heterojunction transistors, is examined. The specific design issues for SiGe HBTs are discussed. These are illustrated by reviewing the experimentally obtained electrical characteristics of recent SiGe-based devices. Analytical and numerical calculations are used to explain the device physics and to assess the potential circuit advantage of SiGe for present and future technologies. Experimental results for a double-polysilicon structure with a non-self-aligned emitter opening are reported. For this type of device the additional degree of freedom available for profile optimization can be employed to enhance f_T, shift the peak f_T to lower current density, or lower the base sheet resistance. Very good DC operation has been observed at room and low temperature, suggesting improved speed performance over homojunction devices.

Original language	English
Pages	57-64
Number of pages	8
State	Published - 1989
Event	Proceedings of the 1989 Bipolar Circuits and Technology Meeting - Minneapolis, MN, USA Duration: Sep 18 1989 → Sep 19 1989

Conference

Conference	Proceedings of the 1989 Bipolar Circuits and Technology Meeting
City	Minneapolis, MN, USA
Period	09/18/89 → 09/19/89

Cite this

@conference{d5aef833dfb5439ca87550791a2744c6,

title = "Design issues for SiGe heterojunction bipolar transistors",

abstract = "Recent progress in the growth of strained SiGe epitaxial layers, demonstrating the feasibility of silicon-based heterojunction transistors, is examined. The specific design issues for SiGe HBTs are discussed. These are illustrated by reviewing the experimentally obtained electrical characteristics of recent SiGe-based devices. Analytical and numerical calculations are used to explain the device physics and to assess the potential circuit advantage of SiGe for present and future technologies. Experimental results for a double-polysilicon structure with a non-self-aligned emitter opening are reported. For this type of device the additional degree of freedom available for profile optimization can be employed to enhance fT, shift the peak fT to lower current density, or lower the base sheet resistance. Very good DC operation has been observed at room and low temperature, suggesting improved speed performance over homojunction devices.",

author = "Stork, \{J. M.C.\} and Patton, \{G. L.\} and Crabbe, \{E. F.\} and Harame, \{D. L.\} and Meyerson, \{B. S.\} and Iyer, \{S. S.\} and E. Ganin",

year = "1989",

language = "English",

pages = "57--64",

note = "Proceedings of the 1989 Bipolar Circuits and Technology Meeting ; Conference date: 18-09-1989 Through 19-09-1989",

}

TY - CONF

T1 - Design issues for SiGe heterojunction bipolar transistors

AU - Stork, J. M.C.

AU - Patton, G. L.

AU - Crabbe, E. F.

AU - Harame, D. L.

AU - Meyerson, B. S.

AU - Iyer, S. S.

AU - Ganin, E.

PY - 1989

Y1 - 1989

N2 - Recent progress in the growth of strained SiGe epitaxial layers, demonstrating the feasibility of silicon-based heterojunction transistors, is examined. The specific design issues for SiGe HBTs are discussed. These are illustrated by reviewing the experimentally obtained electrical characteristics of recent SiGe-based devices. Analytical and numerical calculations are used to explain the device physics and to assess the potential circuit advantage of SiGe for present and future technologies. Experimental results for a double-polysilicon structure with a non-self-aligned emitter opening are reported. For this type of device the additional degree of freedom available for profile optimization can be employed to enhance fT, shift the peak fT to lower current density, or lower the base sheet resistance. Very good DC operation has been observed at room and low temperature, suggesting improved speed performance over homojunction devices.

AB - Recent progress in the growth of strained SiGe epitaxial layers, demonstrating the feasibility of silicon-based heterojunction transistors, is examined. The specific design issues for SiGe HBTs are discussed. These are illustrated by reviewing the experimentally obtained electrical characteristics of recent SiGe-based devices. Analytical and numerical calculations are used to explain the device physics and to assess the potential circuit advantage of SiGe for present and future technologies. Experimental results for a double-polysilicon structure with a non-self-aligned emitter opening are reported. For this type of device the additional degree of freedom available for profile optimization can be employed to enhance fT, shift the peak fT to lower current density, or lower the base sheet resistance. Very good DC operation has been observed at room and low temperature, suggesting improved speed performance over homojunction devices.

UR - https://www.scopus.com/pages/publications/0024914745

M3 - Paper

SP - 57

EP - 64

T2 - Proceedings of the 1989 Bipolar Circuits and Technology Meeting

Y2 - 18 September 1989 through 19 September 1989

ER -

Design issues for SiGe heterojunction bipolar transistors

Abstract

Conference

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