Design of a silicon-WBG hybrid switch

Amol Deshpande; Fang Luo

doi:10.1109/WiPDA.2015.7369319

Design of a silicon-WBG hybrid switch

Amol Deshpande
, Fang Luo

Electrical Engineering

Stony Brook University

Ohio State University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

63 Scopus citations

Abstract

In this paper, a hybrid switch consisting of a Silicon (Si) IGBT in parallel with a Wide Bandgap (WBG) device, either SiC MOSFET or GaN HEMT within a single package is proposed for hard-switching inverters. The hybrid switch enables heavy load conduction through IGBT; light load and transient conduction through the WBG device. This feature is realized through a well-thought control scheme. This work explores the various possibility of controlling this switch, and detailed guidelines for realizing the proposed control are presented. Results indicate elimination of the effects caused by the tail current during turn-off of IGBT; lower or no reverse recovery charge and fast switching capabilities of WBG (Wide Bandgap) device offer significant reduction in the switching energy loss leading to higher switching frequencies. The paper specifically investigates the gating sequence for the hybrid switch to achieve the optimal operation point between the high switching frequency and low losses.

Original language	English
Title of host publication	WiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	296-299
Number of pages	4
ISBN (Electronic)	9781467378857
DOIs	https://doi.org/10.1109/WiPDA.2015.7369319
State	Published - Dec 30 2015
Event	3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015 - Blacksburg, United States Duration: Nov 2 2015 → Nov 4 2015

Publication series

Name	WiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications

Conference

Conference	3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015
Country/Territory	United States
City	Blacksburg
Period	11/2/15 → 11/4/15

Keywords

IGBT
MOSFET
Wide Bandgap Devices
gate control
hybrid Switch

Access to Document

10.1109/WiPDA.2015.7369319

Cite this

@inproceedings{a4d3341c93e44e0a8396f54a6a36aeaf,

title = "Design of a silicon-WBG hybrid switch",

abstract = "In this paper, a hybrid switch consisting of a Silicon (Si) IGBT in parallel with a Wide Bandgap (WBG) device, either SiC MOSFET or GaN HEMT within a single package is proposed for hard-switching inverters. The hybrid switch enables heavy load conduction through IGBT; light load and transient conduction through the WBG device. This feature is realized through a well-thought control scheme. This work explores the various possibility of controlling this switch, and detailed guidelines for realizing the proposed control are presented. Results indicate elimination of the effects caused by the tail current during turn-off of IGBT; lower or no reverse recovery charge and fast switching capabilities of WBG (Wide Bandgap) device offer significant reduction in the switching energy loss leading to higher switching frequencies. The paper specifically investigates the gating sequence for the hybrid switch to achieve the optimal operation point between the high switching frequency and low losses.",

keywords = "IGBT, MOSFET, Wide Bandgap Devices, gate control, hybrid Switch",

author = "Amol Deshpande and Fang Luo",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015 ; Conference date: 02-11-2015 Through 04-11-2015",

year = "2015",

month = dec,

day = "30",

doi = "10.1109/WiPDA.2015.7369319",

language = "English",

series = "WiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "296--299",

booktitle = "WiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications",

}

Deshpande, A & Luo, F 2015, Design of a silicon-WBG hybrid switch. in WiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications., 7369319, WiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, Institute of Electrical and Electronics Engineers Inc., pp. 296-299, 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015, Blacksburg, United States, 11/2/15. https://doi.org/10.1109/WiPDA.2015.7369319

Design of a silicon-WBG hybrid switch. / Deshpande, Amol; Luo, Fang.
WiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications. Institute of Electrical and Electronics Engineers Inc., 2015. p. 296-299 7369319 (WiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Design of a silicon-WBG hybrid switch

AU - Deshpande, Amol

AU - Luo, Fang

PY - 2015/12/30

Y1 - 2015/12/30

N2 - In this paper, a hybrid switch consisting of a Silicon (Si) IGBT in parallel with a Wide Bandgap (WBG) device, either SiC MOSFET or GaN HEMT within a single package is proposed for hard-switching inverters. The hybrid switch enables heavy load conduction through IGBT; light load and transient conduction through the WBG device. This feature is realized through a well-thought control scheme. This work explores the various possibility of controlling this switch, and detailed guidelines for realizing the proposed control are presented. Results indicate elimination of the effects caused by the tail current during turn-off of IGBT; lower or no reverse recovery charge and fast switching capabilities of WBG (Wide Bandgap) device offer significant reduction in the switching energy loss leading to higher switching frequencies. The paper specifically investigates the gating sequence for the hybrid switch to achieve the optimal operation point between the high switching frequency and low losses.

AB - In this paper, a hybrid switch consisting of a Silicon (Si) IGBT in parallel with a Wide Bandgap (WBG) device, either SiC MOSFET or GaN HEMT within a single package is proposed for hard-switching inverters. The hybrid switch enables heavy load conduction through IGBT; light load and transient conduction through the WBG device. This feature is realized through a well-thought control scheme. This work explores the various possibility of controlling this switch, and detailed guidelines for realizing the proposed control are presented. Results indicate elimination of the effects caused by the tail current during turn-off of IGBT; lower or no reverse recovery charge and fast switching capabilities of WBG (Wide Bandgap) device offer significant reduction in the switching energy loss leading to higher switching frequencies. The paper specifically investigates the gating sequence for the hybrid switch to achieve the optimal operation point between the high switching frequency and low losses.

KW - IGBT

KW - MOSFET

KW - Wide Bandgap Devices

KW - gate control

KW - hybrid Switch

UR - https://www.scopus.com/pages/publications/84963550590

U2 - 10.1109/WiPDA.2015.7369319

DO - 10.1109/WiPDA.2015.7369319

M3 - Conference contribution

T3 - WiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications

SP - 296

EP - 299

BT - WiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015

Y2 - 2 November 2015 through 4 November 2015

ER -

Design of a silicon-WBG hybrid switch

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this