Design of photonic crystal membrane-reflector-based VCSELs

D. Zhao; H. Yang; S. Chuwongin; J. H. Seo; Z. Ma; W. Zhou

doi:10.1109/JPHOT.2012.2227955

Design of photonic crystal membrane-reflector-based VCSELs

D. Zhao
, H. Yang
, S. Chuwongin
, J. H. Seo
, Z. Ma
, W. Zhou

Department of Materials Design and Innovation

University at Buffalo

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

We present here the cavity design of distributed-Bragg-reflector-free ultracompact Fano-resonance photonic crystal membrane-reflector vertical-cavity surface-emitting lasers on silicon, which consists of a III-V quantum-well active region sandwiched in between two single-layer Si membrane reflectors (MRs). The Si reflectors are designed to have peak reflection band around 1550 nm, with over 300-nm reflection band. The complete laser cavity resonance was determined, with considerations of unique phase and field distribution characteristics associated with these single-layer MRs. The confinement factor of the lasing mode is optimized around 6%, which enables low threshold lasing.

Original language	English
Article number	6355591
Pages (from-to)	2169-2175
Number of pages	7
Journal	IEEE Photonics Journal
Volume	4
Issue number	6
DOIs	https://doi.org/10.1109/JPHOT.2012.2227955
State	Published - 2012

Keywords

Fano resonance
membrane reflectors (MRs)
photonic crystals (PCs)
semiconductor lasers
silicon nanophotonics
vertical-cavity surface-emitting lasers (VCSELs)

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10.1109/JPHOT.2012.2227955

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title = "Design of photonic crystal membrane-reflector-based VCSELs",

abstract = "We present here the cavity design of distributed-Bragg-reflector-free ultracompact Fano-resonance photonic crystal membrane-reflector vertical-cavity surface-emitting lasers on silicon, which consists of a III-V quantum-well active region sandwiched in between two single-layer Si membrane reflectors (MRs). The Si reflectors are designed to have peak reflection band around 1550 nm, with over 300-nm reflection band. The complete laser cavity resonance was determined, with considerations of unique phase and field distribution characteristics associated with these single-layer MRs. The confinement factor of the lasing mode is optimized around 6\%, which enables low threshold lasing.",

keywords = "Fano resonance, membrane reflectors (MRs), photonic crystals (PCs), semiconductor lasers, silicon nanophotonics, vertical-cavity surface-emitting lasers (VCSELs)",

author = "D. Zhao and H. Yang and S. Chuwongin and Seo, \{J. H.\} and Z. Ma and W. Zhou",

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T1 - Design of photonic crystal membrane-reflector-based VCSELs

AU - Zhao, D.

AU - Yang, H.

AU - Chuwongin, S.

AU - Seo, J. H.

AU - Ma, Z.

AU - Zhou, W.

PY - 2012

Y1 - 2012

N2 - We present here the cavity design of distributed-Bragg-reflector-free ultracompact Fano-resonance photonic crystal membrane-reflector vertical-cavity surface-emitting lasers on silicon, which consists of a III-V quantum-well active region sandwiched in between two single-layer Si membrane reflectors (MRs). The Si reflectors are designed to have peak reflection band around 1550 nm, with over 300-nm reflection band. The complete laser cavity resonance was determined, with considerations of unique phase and field distribution characteristics associated with these single-layer MRs. The confinement factor of the lasing mode is optimized around 6%, which enables low threshold lasing.

AB - We present here the cavity design of distributed-Bragg-reflector-free ultracompact Fano-resonance photonic crystal membrane-reflector vertical-cavity surface-emitting lasers on silicon, which consists of a III-V quantum-well active region sandwiched in between two single-layer Si membrane reflectors (MRs). The Si reflectors are designed to have peak reflection band around 1550 nm, with over 300-nm reflection band. The complete laser cavity resonance was determined, with considerations of unique phase and field distribution characteristics associated with these single-layer MRs. The confinement factor of the lasing mode is optimized around 6%, which enables low threshold lasing.

KW - Fano resonance

KW - membrane reflectors (MRs)

KW - photonic crystals (PCs)

KW - semiconductor lasers

KW - silicon nanophotonics

KW - vertical-cavity surface-emitting lasers (VCSELs)

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DO - 10.1109/JPHOT.2012.2227955

M3 - Article

SN - 1943-0655

VL - 4

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EP - 2175

JO - IEEE Photonics Journal

JF - IEEE Photonics Journal

IS - 6

M1 - 6355591

ER -

Design of photonic crystal membrane-reflector-based VCSELs

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Keywords

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