Determination of Built-in-Potential in N-I-P a-Si:H Solar Cells

M. K. Han; P. Sung; W. A. Anderson

doi:10.1109/EDL.1982.25506

Determination of Built-in-Potential in N-I-P a-Si:H Solar Cells

M. K. Han
, P. Sung
, W. A. Anderson

Department of Electrical Engineering

University at Buffalo

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

This paper describes a simple method to evaluate built-in-potential of P-N junction a-Si:H solar cells. Built-in-potential (Vbi) was calculated from photovoltage-current characteristics at various temperature and illumination levels. Results from two independent, experimental techniques agree extremely well. Vbi - 1-02 eV ± 0.02 eV was obtained for a N-I-P cell having VOC = 650 mV under AMI illumination.

Original language	English
Pages (from-to)	121-124
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	3
Issue number	5
DOIs	https://doi.org/10.1109/EDL.1982.25506
State	Published - May 1982

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title = "Determination of Built-in-Potential in N-I-P a-Si:H Solar Cells",

abstract = "This paper describes a simple method to evaluate built-in-potential of P-N junction a-Si:H solar cells. Built-in-potential (Vbi) was calculated from photovoltage-current characteristics at various temperature and illumination levels. Results from two independent, experimental techniques agree extremely well. Vbi - 1-02 eV ± 0.02 eV was obtained for a N-I-P cell having VOC = 650 mV under AMI illumination.",

author = "Han, \{M. K.\} and P. Sung and Anderson, \{W. A.\}",

year = "1982",

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AU - Sung, P.

AU - Anderson, W. A.

PY - 1982/5

Y1 - 1982/5

N2 - This paper describes a simple method to evaluate built-in-potential of P-N junction a-Si:H solar cells. Built-in-potential (Vbi) was calculated from photovoltage-current characteristics at various temperature and illumination levels. Results from two independent, experimental techniques agree extremely well. Vbi - 1-02 eV ± 0.02 eV was obtained for a N-I-P cell having VOC = 650 mV under AMI illumination.

AB - This paper describes a simple method to evaluate built-in-potential of P-N junction a-Si:H solar cells. Built-in-potential (Vbi) was calculated from photovoltage-current characteristics at various temperature and illumination levels. Results from two independent, experimental techniques agree extremely well. Vbi - 1-02 eV ± 0.02 eV was obtained for a N-I-P cell having VOC = 650 mV under AMI illumination.

UR - https://www.scopus.com/pages/publications/0020129226

U2 - 10.1109/EDL.1982.25506

DO - 10.1109/EDL.1982.25506

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SP - 121

EP - 124

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -

Determination of Built-in-Potential in N-I-P a-Si:H Solar Cells

Abstract

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