Development and characterization of transparent and conductive InZnO films by magnetron sputtering at room temperature

J. Nicholas Alexander; Neville Sun; Richard Sun; Harry Efstathiadis; Pradeep Haldar

doi:10.1016/j.jallcom.2015.01.302

Development and characterization of transparent and conductive InZnO films by magnetron sputtering at room temperature

J. Nicholas Alexander
, Neville Sun
, Richard Sun
, Harry Efstathiadis
, Pradeep Haldar

Nanoscale Science and Engineering

University at Albany

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The electrical and optical properties of InZnO for use as a transparent conducting oxide (TCO) is reported through the investigation of the concentration of indium and oxygen in the film. InZnO films (10-30 wt.% In) were deposited by magnetron sputtering without substrate heating or annealing from a ceramic ZnO and a metallic indium target. The film's properties were investigated by X-ray photoelectric spectroscopy (XPS), 4-point probe, UV-vis spectroscopy (UV-vis), spectroscopic ellipsometry, and Hall measurements. InZnO films obtained properties with low resistivity, on the order of ∼5.5 × 10^-⁴ ohm-cm, with a mobility ∼35 cm²/V S, and carrier concentrations ∼3 ∗ 10²⁰ cm^-³. The band-gap ranged from 2.7 to 3.2 eV with transmission of several samples >80%. InZnO has demonstrated properties adequate for photovoltaic applications.

Original language	English
Pages (from-to)	157-164
Number of pages	8
Journal	Journal of Alloys and Compounds
Volume	633
DOIs	https://doi.org/10.1016/j.jallcom.2015.01.302
State	Published - Jun 5 2015

Keywords

Electronic properties
Optical properties
Oxide materials
Semiconductors
Thin films

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10.1016/j.jallcom.2015.01.302

Cite this

@article{d4628f69f8884728b658a1512f0f2449,

title = "Development and characterization of transparent and conductive InZnO films by magnetron sputtering at room temperature",

abstract = "The electrical and optical properties of InZnO for use as a transparent conducting oxide (TCO) is reported through the investigation of the concentration of indium and oxygen in the film. InZnO films (10-30 wt.\% In) were deposited by magnetron sputtering without substrate heating or annealing from a ceramic ZnO and a metallic indium target. The film's properties were investigated by X-ray photoelectric spectroscopy (XPS), 4-point probe, UV-vis spectroscopy (UV-vis), spectroscopic ellipsometry, and Hall measurements. InZnO films obtained properties with low resistivity, on the order of ∼5.5 × 10-4 ohm-cm, with a mobility ∼35 cm2/V S, and carrier concentrations ∼3 ∗ 1020 cm-3. The band-gap ranged from 2.7 to 3.2 eV with transmission of several samples >80\%. InZnO has demonstrated properties adequate for photovoltaic applications.",

keywords = "Electronic properties, Optical properties, Oxide materials, Semiconductors, Thin films",

author = "Alexander, \{J. Nicholas\} and Neville Sun and Richard Sun and Harry Efstathiadis and Pradeep Haldar",

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year = "2015",

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doi = "10.1016/j.jallcom.2015.01.302",

language = "English",

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journal = "Journal of Alloys and Compounds",

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TY - JOUR

T1 - Development and characterization of transparent and conductive InZnO films by magnetron sputtering at room temperature

AU - Alexander, J. Nicholas

AU - Sun, Neville

AU - Sun, Richard

AU - Efstathiadis, Harry

AU - Haldar, Pradeep

PY - 2015/6/5

Y1 - 2015/6/5

N2 - The electrical and optical properties of InZnO for use as a transparent conducting oxide (TCO) is reported through the investigation of the concentration of indium and oxygen in the film. InZnO films (10-30 wt.% In) were deposited by magnetron sputtering without substrate heating or annealing from a ceramic ZnO and a metallic indium target. The film's properties were investigated by X-ray photoelectric spectroscopy (XPS), 4-point probe, UV-vis spectroscopy (UV-vis), spectroscopic ellipsometry, and Hall measurements. InZnO films obtained properties with low resistivity, on the order of ∼5.5 × 10-4 ohm-cm, with a mobility ∼35 cm2/V S, and carrier concentrations ∼3 ∗ 1020 cm-3. The band-gap ranged from 2.7 to 3.2 eV with transmission of several samples >80%. InZnO has demonstrated properties adequate for photovoltaic applications.

AB - The electrical and optical properties of InZnO for use as a transparent conducting oxide (TCO) is reported through the investigation of the concentration of indium and oxygen in the film. InZnO films (10-30 wt.% In) were deposited by magnetron sputtering without substrate heating or annealing from a ceramic ZnO and a metallic indium target. The film's properties were investigated by X-ray photoelectric spectroscopy (XPS), 4-point probe, UV-vis spectroscopy (UV-vis), spectroscopic ellipsometry, and Hall measurements. InZnO films obtained properties with low resistivity, on the order of ∼5.5 × 10-4 ohm-cm, with a mobility ∼35 cm2/V S, and carrier concentrations ∼3 ∗ 1020 cm-3. The band-gap ranged from 2.7 to 3.2 eV with transmission of several samples >80%. InZnO has demonstrated properties adequate for photovoltaic applications.

KW - Electronic properties

KW - Optical properties

KW - Oxide materials

KW - Semiconductors

KW - Thin films

UR - https://www.scopus.com/pages/publications/84923591197

U2 - 10.1016/j.jallcom.2015.01.302

DO - 10.1016/j.jallcom.2015.01.302

M3 - Article

SN - 0925-8388

VL - 633

SP - 157

EP - 164

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Development and characterization of transparent and conductive InZnO films by magnetron sputtering at room temperature

Abstract

Keywords

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