Abstract
The output I-V characteristics and conversion efficiency of MIS/IL and MINP silicon solar cells are improved greatly when the ultra-thin silicon oxide film prepared by conventional techniques is treated with ammonia at low temperature and low pressure. Furthermore, we first succeeded in preparing the ultra-thin Si//x O//yN//z insulator film formed directly under ammonia atmosphere. The total area conversion efficiency of 13. 5 percent (AM 1. 5, 100m/cm**2, 25 degree C, area 1. 02 cm**2) for MIS/IL silicon solar cells and 16. 1 percent (AM 1. 5, 100 mw/cm**2, 25 degree C, area 1. 11 cm**2) for MINP silicon solar cells have been developed using simple techniques.
| Original language | English |
|---|---|
| Pages (from-to) | 128-133 |
| Number of pages | 6 |
| Journal | Taiyangneng Xuebao/Acta Energiae Solaris Sinica |
| Volume | 9 |
| Issue number | 2 |
| State | Published - Apr 1988 |
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