Device model for graphene nanoribbon phototransistor

Victor Ryzhii; Vladimir Mitin; Maxim Ryzhii; Nadezhda Ryabova; Taiichi Otsuji

doi:10.1143/APEX.1.063002

Device model for graphene nanoribbon phototransistor

Victor Ryzhii
, Vladimir Mitin
, Maxim Ryzhii
, Nadezhda Ryabova
, Taiichi Otsuji

Department of Electrical Engineering

University at Buffalo

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

An analytical device model for a graphene nanoribbon phototransistor (GNR-PT) is presented. GNR-PT is based on an array of graphene nanoribbons with the side source and drain contacts, which is sandwiched between the highly conducting substrate and the top gate. Using the developed model, we derive the explicit analytical relationships for the source-drain current as a function of the intensity and frequency of the incident radiation and find the detector responsivity. It is shown that QNR-PTs can be rather effective photodetectors in infrared and terahertz ranges of spectrum.

Original language	English
Pages (from-to)	630021-630023
Number of pages	3
Journal	Applied Physics Express
Volume	1
Issue number	6
DOIs	https://doi.org/10.1143/APEX.1.063002
State	Published - Jun 2008

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title = "Device model for graphene nanoribbon phototransistor",

abstract = "An analytical device model for a graphene nanoribbon phototransistor (GNR-PT) is presented. GNR-PT is based on an array of graphene nanoribbons with the side source and drain contacts, which is sandwiched between the highly conducting substrate and the top gate. Using the developed model, we derive the explicit analytical relationships for the source-drain current as a function of the intensity and frequency of the incident radiation and find the detector responsivity. It is shown that QNR-PTs can be rather effective photodetectors in infrared and terahertz ranges of spectrum.",

author = "Victor Ryzhii and Vladimir Mitin and Maxim Ryzhii and Nadezhda Ryabova and Taiichi Otsuji",

year = "2008",

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T1 - Device model for graphene nanoribbon phototransistor

AU - Ryzhii, Victor

AU - Mitin, Vladimir

AU - Ryzhii, Maxim

AU - Ryabova, Nadezhda

AU - Otsuji, Taiichi

PY - 2008/6

Y1 - 2008/6

N2 - An analytical device model for a graphene nanoribbon phototransistor (GNR-PT) is presented. GNR-PT is based on an array of graphene nanoribbons with the side source and drain contacts, which is sandwiched between the highly conducting substrate and the top gate. Using the developed model, we derive the explicit analytical relationships for the source-drain current as a function of the intensity and frequency of the incident radiation and find the detector responsivity. It is shown that QNR-PTs can be rather effective photodetectors in infrared and terahertz ranges of spectrum.

AB - An analytical device model for a graphene nanoribbon phototransistor (GNR-PT) is presented. GNR-PT is based on an array of graphene nanoribbons with the side source and drain contacts, which is sandwiched between the highly conducting substrate and the top gate. Using the developed model, we derive the explicit analytical relationships for the source-drain current as a function of the intensity and frequency of the incident radiation and find the detector responsivity. It is shown that QNR-PTs can be rather effective photodetectors in infrared and terahertz ranges of spectrum.

UR - https://www.scopus.com/pages/publications/57649106130

U2 - 10.1143/APEX.1.063002

DO - 10.1143/APEX.1.063002

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VL - 1

SP - 630021

EP - 630023

JO - Applied Physics Express

JF - Applied Physics Express

IS - 6

ER -

Device model for graphene nanoribbon phototransistor

Abstract

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