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Device model of integrated QWIP-HBT-LED pixel for infrared focal plane arrays

  • The University of Aizu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

We propose and evaluate a novel device based on integration of quantum well infrared photodetector (QWIP), heterostructure bipolar transistor (HBT), and light emitting diode (LED) for up-conversion of middle infrared into near infrared (visible) radiation. Its operation is associated with intersubband absorption of middle infrared radiation in the QWIP, amplification of the QWIP output electric signal in the HBT and emission of near infrared or visible radiation from the LED driven by the current injected from the HBT. The integrated QWIP-HBT-LED device can serve as a highly effective pixel for infrared focal plane arrays.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
EditorsGiorgio Baccarani, Massimo Rudan, Elena Gnani
PublisherIEEE Computer Society
Pages643-646
Number of pages4
ISBN (Electronic)8890084782
DOIs
StatePublished - 2002
Event9th International Conference on Computer Vision Theory and Applications, VISAPP 2014 - Firenze, Italy
Duration: Sep 24 2002Sep 26 2002

Publication series

NameEuropean Solid-State Device Research Conference

Conference

Conference9th International Conference on Computer Vision Theory and Applications, VISAPP 2014
Country/TerritoryItaly
CityFirenze
Period09/24/0209/26/02

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