Diffraction limited 3.15 μm cascade diode lasers

Rui Liang; Leon Shterengas; Takashi Hosoda; Aaron Stein; Ming Lu; Gela Kipshidze; Gregory Belenky

doi:10.1088/0268-1242/29/11/115016

Diffraction limited 3.15 μm cascade diode lasers

Rui Liang
, Leon Shterengas
, Takashi Hosoda
, Aaron Stein
, Ming Lu
, Gela Kipshidze
, Gregory Belenky

Electrical Engineering

Stony Brook University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Cascade GaSb-based type-I quantum well diode lasers emitting near 3.15 μm were designed and fabricated. The efficient carrier recycling between stages was confirmed by twofold increase of the efficiency of two-stage cascade laser as compared to reference single-stage devices. Narrow ridge cascade lasers generated more than 40 mW of continuous-wave output power in diffraction limited beam at room temperature.

Original language	English
Article number	115016
Journal	Semiconductor Science and Technology
Volume	29
Issue number	11
DOIs	https://doi.org/10.1088/0268-1242/29/11/115016
State	Published - Nov 1 2014

Keywords

GaSb
cascade
diffraction limited
diode lasers
quantum well
type-I

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10.1088/0268-1242/29/11/115016

Cite this

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title = "Diffraction limited 3.15 μm cascade diode lasers",

abstract = "Cascade GaSb-based type-I quantum well diode lasers emitting near 3.15 μm were designed and fabricated. The efficient carrier recycling between stages was confirmed by twofold increase of the efficiency of two-stage cascade laser as compared to reference single-stage devices. Narrow ridge cascade lasers generated more than 40 mW of continuous-wave output power in diffraction limited beam at room temperature.",

keywords = "GaSb, cascade, diffraction limited, diode lasers, quantum well, type-I",

author = "Rui Liang and Leon Shterengas and Takashi Hosoda and Aaron Stein and Ming Lu and Gela Kipshidze and Gregory Belenky",

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T1 - Diffraction limited 3.15 μm cascade diode lasers

AU - Liang, Rui

AU - Shterengas, Leon

AU - Hosoda, Takashi

AU - Stein, Aaron

AU - Lu, Ming

AU - Kipshidze, Gela

AU - Belenky, Gregory

PY - 2014/11/1

Y1 - 2014/11/1

N2 - Cascade GaSb-based type-I quantum well diode lasers emitting near 3.15 μm were designed and fabricated. The efficient carrier recycling between stages was confirmed by twofold increase of the efficiency of two-stage cascade laser as compared to reference single-stage devices. Narrow ridge cascade lasers generated more than 40 mW of continuous-wave output power in diffraction limited beam at room temperature.

AB - Cascade GaSb-based type-I quantum well diode lasers emitting near 3.15 μm were designed and fabricated. The efficient carrier recycling between stages was confirmed by twofold increase of the efficiency of two-stage cascade laser as compared to reference single-stage devices. Narrow ridge cascade lasers generated more than 40 mW of continuous-wave output power in diffraction limited beam at room temperature.

KW - GaSb

KW - cascade

KW - diffraction limited

KW - diode lasers

KW - quantum well

KW - type-I

UR - https://www.scopus.com/pages/publications/84908042266

U2 - 10.1088/0268-1242/29/11/115016

DO - 10.1088/0268-1242/29/11/115016

M3 - Article

SN - 0268-1242

VL - 29

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 11

M1 - 115016

ER -

Diffraction limited 3.15 μm cascade diode lasers

Abstract

Keywords

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