Diffusion-limited transport in the off-state of amorphous Si thin-film transistors

J. U. Lee; G. E. Possin

doi:10.1063/1.1555706

Diffusion-limited transport in the off-state of amorphous Si thin-film transistors

J. U. Lee
, G. E. Possin

Nanoscale Science and Engineering

University at Albany

General Electric

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The transient off-state transport in amorphous silicon thin-film transistors was modeled by deriving an analytic solution. A diffusion equation with a generation term to account for the emission from deep states formed the basis of the solution. Results indicated that for times greater than the diffusion time, the transport current was proportional to the generation rate from approximately uniform density of states in the band gap.

Original language	English
Pages (from-to)	1302-1304
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	8
DOIs	https://doi.org/10.1063/1.1555706
State	Published - Feb 24 2003

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abstract = "The transient off-state transport in amorphous silicon thin-film transistors was modeled by deriving an analytic solution. A diffusion equation with a generation term to account for the emission from deep states formed the basis of the solution. Results indicated that for times greater than the diffusion time, the transport current was proportional to the generation rate from approximately uniform density of states in the band gap.",

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AB - The transient off-state transport in amorphous silicon thin-film transistors was modeled by deriving an analytic solution. A diffusion equation with a generation term to account for the emission from deep states formed the basis of the solution. Results indicated that for times greater than the diffusion time, the transport current was proportional to the generation rate from approximately uniform density of states in the band gap.

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Diffusion-limited transport in the off-state of amorphous Si thin-film transistors

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