Diode lasers emitting near 3.44m in continuous-wave regime at 300K

T. Hosoda; G. Kipshidze; L. Shterengas; G. Belenky

doi:10.1049/el.2010.2564

Diode lasers emitting near 3.44m in continuous-wave regime at 300K

T. Hosoda
, G. Kipshidze
, L. Shterengas
, G. Belenky

Electrical Engineering

Stony Brook University

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

A continuous-wave, room temperature operation of type-I quantum well diode lasers was extended above 3.4m. The laser heterostructure, optimised for minimum threshold carrier concentration, was pseudomorphically grown by solid source molecular beam epitaxy on GaSb. Multimode lasers generate 29mW of output power at 17°C.

Original language	English
Pages (from-to)	1455-1457
Number of pages	3
Journal	Electronics Letters
Volume	46
Issue number	21
DOIs	https://doi.org/10.1049/el.2010.2564
State	Published - Oct 14 2010

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10.1049/el.2010.2564

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title = "Diode lasers emitting near 3.44m in continuous-wave regime at 300K",

abstract = "A continuous-wave, room temperature operation of type-I quantum well diode lasers was extended above 3.4m. The laser heterostructure, optimised for minimum threshold carrier concentration, was pseudomorphically grown by solid source molecular beam epitaxy on GaSb. Multimode lasers generate 29mW of output power at 17°C.",

author = "T. Hosoda and G. Kipshidze and L. Shterengas and G. Belenky",

year = "2010",

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doi = "10.1049/el.2010.2564",

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T1 - Diode lasers emitting near 3.44m in continuous-wave regime at 300K

AU - Hosoda, T.

AU - Kipshidze, G.

AU - Shterengas, L.

AU - Belenky, G.

PY - 2010/10/14

Y1 - 2010/10/14

N2 - A continuous-wave, room temperature operation of type-I quantum well diode lasers was extended above 3.4m. The laser heterostructure, optimised for minimum threshold carrier concentration, was pseudomorphically grown by solid source molecular beam epitaxy on GaSb. Multimode lasers generate 29mW of output power at 17°C.

AB - A continuous-wave, room temperature operation of type-I quantum well diode lasers was extended above 3.4m. The laser heterostructure, optimised for minimum threshold carrier concentration, was pseudomorphically grown by solid source molecular beam epitaxy on GaSb. Multimode lasers generate 29mW of output power at 17°C.

UR - https://www.scopus.com/pages/publications/77958120319

U2 - 10.1049/el.2010.2564

DO - 10.1049/el.2010.2564

M3 - Article

SN - 0013-5194

VL - 46

SP - 1455

EP - 1457

JO - Electronics Letters

JF - Electronics Letters

IS - 21

ER -

Diode lasers emitting near 3.44m in continuous-wave regime at 300K

Abstract

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