Direct measurements of heterobarrier leakage current and modal gain in 2.3μm double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers

D. V. Donetsky; G. L. Belenky; D. Z. Garbuzov; H. Lee; R. U. Martinelli; G. Taylor; S. Luryi; J. C. Connolly

doi:10.1049/el:19990242

Direct measurements of heterobarrier leakage current and modal gain in 2.3μm double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers

D. V. Donetsky
, G. L. Belenky
, D. Z. Garbuzov
, H. Lee
, R. U. Martinelli
, G. Taylor
, S. Luryi
, J. C. Connolly

Electrical Engineering

Stony Brook University

Stony Brook University
Sarnoff Corporation

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

The heterobarrier hole leakage current and modal gain for GaSb-based lasers have been measured for the first time. It is shown that this leakage current is not a factor limiting high temperature operation of the device. Significant broadening of the optical gain with increasing temperature is demonstrated.

Original language	English
Pages (from-to)	298-299
Number of pages	2
Journal	Electronics Letters
Volume	35
Issue number	4
DOIs	https://doi.org/10.1049/el:19990242
State	Published - Feb 18 1999

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10.1049/el:19990242

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title = "Direct measurements of heterobarrier leakage current and modal gain in 2.3μm double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers",

abstract = "The heterobarrier hole leakage current and modal gain for GaSb-based lasers have been measured for the first time. It is shown that this leakage current is not a factor limiting high temperature operation of the device. Significant broadening of the optical gain with increasing temperature is demonstrated.",

author = "Donetsky, \{D. V.\} and Belenky, \{G. L.\} and Garbuzov, \{D. Z.\} and H. Lee and Martinelli, \{R. U.\} and G. Taylor and S. Luryi and Connolly, \{J. C.\}",

year = "1999",

month = feb,

day = "18",

doi = "10.1049/el:19990242",

language = "English",

volume = "35",

pages = "298--299",

journal = "Electronics Letters",

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T1 - Direct measurements of heterobarrier leakage current and modal gain in 2.3μm double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers

AU - Donetsky, D. V.

AU - Belenky, G. L.

AU - Garbuzov, D. Z.

AU - Lee, H.

AU - Martinelli, R. U.

AU - Taylor, G.

AU - Luryi, S.

AU - Connolly, J. C.

PY - 1999/2/18

Y1 - 1999/2/18

N2 - The heterobarrier hole leakage current and modal gain for GaSb-based lasers have been measured for the first time. It is shown that this leakage current is not a factor limiting high temperature operation of the device. Significant broadening of the optical gain with increasing temperature is demonstrated.

AB - The heterobarrier hole leakage current and modal gain for GaSb-based lasers have been measured for the first time. It is shown that this leakage current is not a factor limiting high temperature operation of the device. Significant broadening of the optical gain with increasing temperature is demonstrated.

UR - https://www.scopus.com/pages/publications/0033076312

U2 - 10.1049/el:19990242

DO - 10.1049/el:19990242

M3 - Article

SN - 0013-5194

VL - 35

SP - 298

EP - 299

JO - Electronics Letters

JF - Electronics Letters

IS - 4

ER -

Direct measurements of heterobarrier leakage current and modal gain in 2.3μm double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers

Abstract

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