Dislocation glide at a (100) SixGe1-x/Si interface

Krishna Rajan

doi:10.1063/1.105955

Dislocation glide at a (100) Si_xGe_1-x/Si interface

Krishna Rajan

Department of Materials Design and Innovation

University at Buffalo

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

An unusual fourfold extended dislocation node at a Si_xGe _1-x/Si strained layer interface has been revealed using weak-beam electron microscopy. A detailed contrast analysis shows that this node structure is the result of the constriction of Lomer-Cottrell dislocations formed by intersecting slip dislocations on {100} and {111} type planes. This mechanism necessitates the glissile behavior of dislocation nodes at the (100) epitaxial interface.

Original language	English
Pages (from-to)	2564-2566
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	20
DOIs	https://doi.org/10.1063/1.105955
State	Published - 1991

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title = "Dislocation glide at a (100) SixGe1-x/Si interface",

abstract = "An unusual fourfold extended dislocation node at a SixGe 1-x/Si strained layer interface has been revealed using weak-beam electron microscopy. A detailed contrast analysis shows that this node structure is the result of the constriction of Lomer-Cottrell dislocations formed by intersecting slip dislocations on \{100\} and \{111\} type planes. This mechanism necessitates the glissile behavior of dislocation nodes at the (100) epitaxial interface.",

author = "Krishna Rajan",

year = "1991",

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T1 - Dislocation glide at a (100) SixGe1-x/Si interface

AU - Rajan, Krishna

PY - 1991

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N2 - An unusual fourfold extended dislocation node at a SixGe 1-x/Si strained layer interface has been revealed using weak-beam electron microscopy. A detailed contrast analysis shows that this node structure is the result of the constriction of Lomer-Cottrell dislocations formed by intersecting slip dislocations on {100} and {111} type planes. This mechanism necessitates the glissile behavior of dislocation nodes at the (100) epitaxial interface.

AB - An unusual fourfold extended dislocation node at a SixGe 1-x/Si strained layer interface has been revealed using weak-beam electron microscopy. A detailed contrast analysis shows that this node structure is the result of the constriction of Lomer-Cottrell dislocations formed by intersecting slip dislocations on {100} and {111} type planes. This mechanism necessitates the glissile behavior of dislocation nodes at the (100) epitaxial interface.

UR - https://www.scopus.com/pages/publications/0345101557

U2 - 10.1063/1.105955

DO - 10.1063/1.105955

M3 - Article

SN - 0003-6951

VL - 59

SP - 2564

EP - 2566

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Dislocation glide at a (100) Si_xGe_1-x/Si interface

Abstract

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