Abstract
It has recently been suggested that the diffusion/permeation of hydrogen implanted in Mo and Ni is strongly enhanced by the formation of stable and mobile hydrogen-self interstitial atom complexes. This suggestion is based partly on observations of a strong influence of these complexes on implanted He profiles. Measurements are presented showing this effect to be negligible.
| Original language | English |
|---|---|
| Pages (from-to) | 169-172 |
| Number of pages | 4 |
| Journal | Radiation effects letters |
| Volume | 76 |
| Issue number | 5 |
| State | Published - 1983 |
Fingerprint
Dive into the research topics of 'DO H-SIA C0MPLEXES INTERACT WITH IMPLANTED HE IN MO?'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver