Double shockley stacking fault formation in higher doping regions of PVT-grown 4H-SiC wafers

Y. Yang; J. Guo; O. Y. Goue; H. Wang; F. Wu; B. Raghothamachar; M. Dudley; G. Chung; J. Quast; E. Sanchez; I. Manning; Darren Hansen

doi:10.1149/06911.0039ecst

Double shockley stacking fault formation in higher doping regions of PVT-grown 4H-SiC wafers

Y. Yang
, J. Guo
, O. Y. Goue
, H. Wang
, F. Wu
, B. Raghothamachar
, M. Dudley
, G. Chung
, J. Quast
, E. Sanchez
, I. Manning
, Darren Hansen

Materials Science and Engineering

Stony Brook University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this study of 4H-SiC wafers, we report the observation of overlapping Shockley stacking faults generated from residual surface scratches in regions of higher doping concentration after the wafers have been subjected to heat treatment. The stacking faults are rhombus shaped and are bound by partial dislocations. The process is driven by the fact that a faulted crystal containing double Shockley faults is more stable than perfect 4H-SiC crystal at the high temperatures (>1000 C) that our samples have been subjected to during heat treatment. We have developed a model for the formation mechanism of the rhombus shaped stacking faults and the partial dislocation configuration has been verified using back reflection synchrotron topography. Our studies show that double Shockley faults can be generated in regions where dislocation sources are presents (eg. scratches or low angle boundaries) and when the nitrogen doping concentration exceeds a certain level when the crystals are subjected to heat treatment.

Original language	English
Title of host publication	GaN and SiC Power Technologies 5
Editors	K. Shenai, M. Dudley, N. Ohtani, M. Bakowski
Publisher	Electrochemical Society Inc.
Pages	39-46
Number of pages	8
Edition	11
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/06911.0039ecst
State	Published - 2015
Event	Symposium on GaN and SiC Power Technologies 5 - 228th ECS Meeting - Phoenix, United States Duration: Oct 11 2015 → Oct 15 2015

Publication series

Name	ECS Transactions
Number	11
Volume	69

Conference

Conference	Symposium on GaN and SiC Power Technologies 5 - 228th ECS Meeting
Country/Territory	United States
City	Phoenix
Period	10/11/15 → 10/15/15

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10.1149/06911.0039ecst

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Yang, Y., Guo, J., Goue, O. Y., Wang, H., Wu, F., Raghothamachar, B., Dudley, M., Chung, G., Quast, J., Sanchez, E., Manning, I., & Hansen, D. (2015). Double shockley stacking fault formation in higher doping regions of PVT-grown 4H-SiC wafers. In K. Shenai, M. Dudley, N. Ohtani, & M. Bakowski (Eds.), GaN and SiC Power Technologies 5 (11 ed., pp. 39-46). (ECS Transactions; Vol. 69, No. 11). Electrochemical Society Inc.. https://doi.org/10.1149/06911.0039ecst

@inproceedings{38993d53ccc5402890fcd6b583767c4a,

title = "Double shockley stacking fault formation in higher doping regions of PVT-grown 4H-SiC wafers",

abstract = "In this study of 4H-SiC wafers, we report the observation of overlapping Shockley stacking faults generated from residual surface scratches in regions of higher doping concentration after the wafers have been subjected to heat treatment. The stacking faults are rhombus shaped and are bound by partial dislocations. The process is driven by the fact that a faulted crystal containing double Shockley faults is more stable than perfect 4H-SiC crystal at the high temperatures (>1000 C) that our samples have been subjected to during heat treatment. We have developed a model for the formation mechanism of the rhombus shaped stacking faults and the partial dislocation configuration has been verified using back reflection synchrotron topography. Our studies show that double Shockley faults can be generated in regions where dislocation sources are presents (eg. scratches or low angle boundaries) and when the nitrogen doping concentration exceeds a certain level when the crystals are subjected to heat treatment.",

author = "Y. Yang and J. Guo and Goue, \{O. Y.\} and H. Wang and F. Wu and B. Raghothamachar and M. Dudley and G. Chung and J. Quast and E. Sanchez and I. Manning and Darren Hansen",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on GaN and SiC Power Technologies 5 - 228th ECS Meeting ; Conference date: 11-10-2015 Through 15-10-2015",

year = "2015",

doi = "10.1149/06911.0039ecst",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "11",

pages = "39--46",

editor = "K. Shenai and M. Dudley and N. Ohtani and M. Bakowski",

booktitle = "GaN and SiC Power Technologies 5",

edition = "11",

}

Yang, Y, Guo, J, Goue, OY, Wang, H, Wu, F, Raghothamachar, B, Dudley, M, Chung, G, Quast, J, Sanchez, E, Manning, I & Hansen, D 2015, Double shockley stacking fault formation in higher doping regions of PVT-grown 4H-SiC wafers. in K Shenai, M Dudley, N Ohtani & M Bakowski (eds), GaN and SiC Power Technologies 5. 11 edn, ECS Transactions, no. 11, vol. 69, Electrochemical Society Inc., pp. 39-46, Symposium on GaN and SiC Power Technologies 5 - 228th ECS Meeting, Phoenix, United States, 10/11/15. https://doi.org/10.1149/06911.0039ecst

Double shockley stacking fault formation in higher doping regions of PVT-grown 4H-SiC wafers. / Yang, Y.; Guo, J.; Goue, O. Y. et al.
GaN and SiC Power Technologies 5. ed. / K. Shenai; M. Dudley; N. Ohtani; M. Bakowski. 11. ed. Electrochemical Society Inc., 2015. p. 39-46 (ECS Transactions; Vol. 69, No. 11).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Double shockley stacking fault formation in higher doping regions of PVT-grown 4H-SiC wafers

AU - Yang, Y.

AU - Guo, J.

AU - Goue, O. Y.

AU - Wang, H.

AU - Wu, F.

AU - Raghothamachar, B.

AU - Dudley, M.

AU - Chung, G.

AU - Quast, J.

AU - Sanchez, E.

AU - Manning, I.

AU - Hansen, Darren

PY - 2015

Y1 - 2015

N2 - In this study of 4H-SiC wafers, we report the observation of overlapping Shockley stacking faults generated from residual surface scratches in regions of higher doping concentration after the wafers have been subjected to heat treatment. The stacking faults are rhombus shaped and are bound by partial dislocations. The process is driven by the fact that a faulted crystal containing double Shockley faults is more stable than perfect 4H-SiC crystal at the high temperatures (>1000 C) that our samples have been subjected to during heat treatment. We have developed a model for the formation mechanism of the rhombus shaped stacking faults and the partial dislocation configuration has been verified using back reflection synchrotron topography. Our studies show that double Shockley faults can be generated in regions where dislocation sources are presents (eg. scratches or low angle boundaries) and when the nitrogen doping concentration exceeds a certain level when the crystals are subjected to heat treatment.

AB - In this study of 4H-SiC wafers, we report the observation of overlapping Shockley stacking faults generated from residual surface scratches in regions of higher doping concentration after the wafers have been subjected to heat treatment. The stacking faults are rhombus shaped and are bound by partial dislocations. The process is driven by the fact that a faulted crystal containing double Shockley faults is more stable than perfect 4H-SiC crystal at the high temperatures (>1000 C) that our samples have been subjected to during heat treatment. We have developed a model for the formation mechanism of the rhombus shaped stacking faults and the partial dislocation configuration has been verified using back reflection synchrotron topography. Our studies show that double Shockley faults can be generated in regions where dislocation sources are presents (eg. scratches or low angle boundaries) and when the nitrogen doping concentration exceeds a certain level when the crystals are subjected to heat treatment.

UR - https://www.scopus.com/pages/publications/84945974570

U2 - 10.1149/06911.0039ecst

DO - 10.1149/06911.0039ecst

M3 - Conference contribution

T3 - ECS Transactions

SP - 39

EP - 46

BT - GaN and SiC Power Technologies 5

A2 - Shenai, K.

A2 - Dudley, M.

A2 - Ohtani, N.

A2 - Bakowski, M.

PB - Electrochemical Society Inc.

T2 - Symposium on GaN and SiC Power Technologies 5 - 228th ECS Meeting

Y2 - 11 October 2015 through 15 October 2015

ER -

Double shockley stacking fault formation in higher doping regions of PVT-grown 4H-SiC wafers

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