Abstract
Dual floating gate flash memory has been fabricated and characterized to show dynamic operation, non-volatile operation, and simultaneous dynamic and non-volatile operation. The gate stack consists of a thin dielectric separating two floating gates sandwiched between a tunnel dielectric and interpoly dielectric. The quality of the thin dielectric that separates the floating gates is of utmost importance to retain dynamic operation. In this letter, we investigate a dual floating gate memory transistor and show its potential to combine DRAM and flash functionality in the same device.
| Original language | English |
|---|---|
| Article number | 6678742 |
| Pages (from-to) | 48-50 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 35 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 2014 |
Keywords
- FN tunneling
- Flash memory
- MOSFET
- direct tunneling
- dynamic memory
- floating gate
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