Effect of conductive LaNiO ₃ electrode on the structural and ferroelectric properties of Bi _3.25La _0.75Ti ₃O ₁₂ films

Ferroelectric Bi3.25 La0.75 Ti3 O12 (BLT) films were grown on PtTiSi O2 Si (PtSi), LaNi O3 PtSi, and LaNi O3 Si substrates using chemical solution deposition technique. X-ray diffraction analysis shows that films grown on conductive LaNi O3 electrodes had higher degree of (117) orientation as compared to that grown directly on PtSi substrate. High remanent polarization value (2 Pr) ∼43.14 μC cm2 (Ec of 111 kVcm) under an applied field of 396 kVcm was obtained for BLT film on LaNi O3 PtSi as compared to a value of 26 μC cm2 obtained for BLT film on Pt/Si directly. There was no degradation in the switchable polarization (Psw - Pns) after 1010 switching cycles.