TY - GEN
T1 - Effect of Ion Flux in Source-Drain Extension Ion Implantation for 10-nm Node FinFet and beyond on 300/450mm Platforms
AU - Shen, Ming Yi
AU - Basavalingappa, Adarsh
AU - Borst, Christopher
AU - Hayakawa, Takeshi
AU - Matsugi, Hidekazu
AU - Chang, Stock
N1 - Publisher Copyright: © 2016 IEEE.
PY - 2017/3/20
Y1 - 2017/3/20
N2 - The effects of very high ion flux and very large ion beam current need to be investigated if very high ion flux is to be considered as a method of throughput increase for high-current ion implantation. In this work, Synopsys TCAD Sentaurus was used to simulate As ion implantation in order to obtain silicon amorphization and dopant distribution data. The TEM images are consistent with TCAD simulation results. The device performance of the simulated Id-Vg curves for 10-nm node silicon FinFET was evaluated. It was determined that higher ion flux results in more As dopants in the channel at the same beam dose. The effects of the FinFET device performance, including current on/off ratio, and subthreshold swing, were studied. It was concluded the high ion flux does not have a detrimental impact on the FinFET electrical parameters examined in this work when the dose is chosen properly.
AB - The effects of very high ion flux and very large ion beam current need to be investigated if very high ion flux is to be considered as a method of throughput increase for high-current ion implantation. In this work, Synopsys TCAD Sentaurus was used to simulate As ion implantation in order to obtain silicon amorphization and dopant distribution data. The TEM images are consistent with TCAD simulation results. The device performance of the simulated Id-Vg curves for 10-nm node silicon FinFET was evaluated. It was determined that higher ion flux results in more As dopants in the channel at the same beam dose. The effects of the FinFET device performance, including current on/off ratio, and subthreshold swing, were studied. It was concluded the high ion flux does not have a detrimental impact on the FinFET electrical parameters examined in this work when the dose is chosen properly.
KW - FinFET
KW - ion flux
KW - source-drain extension
KW - throughput
UR - https://www.scopus.com/pages/publications/85018534456
U2 - 10.1109/IIT.2016.7882867
DO - 10.1109/IIT.2016.7882867
M3 - Conference contribution
T3 - Proceedings of the International Conference on Ion Implantation Technology
BT - 2016 21st International Conference on Ion Implantation Technology, IIT 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 21st International Conference on Ion Implantation Technology, IIT 2016
Y2 - 26 September 2016 through 30 September 2016
ER -