Effects of LaSiOx Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs with LaSiOx

Xiangyu Yang; Bongmook Lee; Veena Misra

doi:10.1109/TED.2018.2875094

Effects of LaSiO_x Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs with LaSiO_x

Xiangyu Yang
, Bongmook Lee
, Veena Misra

College of Engineering

SUNY Polytechnic Institute

North Carolina State University
Micron Technology Incorporated

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We report the effects of lanthanum-rich layer thickness and forming gas anneal (FGA) conditions on mobility and threshold voltage ( V_T ) instability of high-mobility 4H-SiC MOSFETs using lanthanum silicate (LaSiO_x) interface engineering. MOSFETs with LaSiO_x after high-temperature FGA show significantly improved V_T reliability under positive gate bias. It is found that both the thickness of the initial lanthanum-rich layer and the FGA temperature profoundly influence MOSFET mobility and V_T instability under positive bias. There is a tradeoff between mobility and V_T shift under positive bias.

Original language	English
Article number	8521701
Pages (from-to)	539-545
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	1
DOIs	https://doi.org/10.1109/TED.2018.2875094
State	Published - Jan 2019

Keywords

Atomic layer deposition (ALD)
Forming gas anneal (FGA) lanthanum silicate (LaSiO)
Mobility SiC
threshold voltage

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10.1109/TED.2018.2875094

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title = "Effects of LaSiOx Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs with LaSiOx",

abstract = "We report the effects of lanthanum-rich layer thickness and forming gas anneal (FGA) conditions on mobility and threshold voltage ( VT ) instability of high-mobility 4H-SiC MOSFETs using lanthanum silicate (LaSiOx) interface engineering. MOSFETs with LaSiOx after high-temperature FGA show significantly improved VT reliability under positive gate bias. It is found that both the thickness of the initial lanthanum-rich layer and the FGA temperature profoundly influence MOSFET mobility and VT instability under positive bias. There is a tradeoff between mobility and VT shift under positive bias.",

keywords = "Atomic layer deposition (ALD), Forming gas anneal (FGA) lanthanum silicate (LaSiO), Mobility SiC, threshold voltage",

author = "Xiangyu Yang and Bongmook Lee and Veena Misra",

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T1 - Effects of LaSiOx Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs with LaSiOx

AU - Yang, Xiangyu

AU - Lee, Bongmook

AU - Misra, Veena

PY - 2019/1

Y1 - 2019/1

N2 - We report the effects of lanthanum-rich layer thickness and forming gas anneal (FGA) conditions on mobility and threshold voltage ( VT ) instability of high-mobility 4H-SiC MOSFETs using lanthanum silicate (LaSiOx) interface engineering. MOSFETs with LaSiOx after high-temperature FGA show significantly improved VT reliability under positive gate bias. It is found that both the thickness of the initial lanthanum-rich layer and the FGA temperature profoundly influence MOSFET mobility and VT instability under positive bias. There is a tradeoff between mobility and VT shift under positive bias.

AB - We report the effects of lanthanum-rich layer thickness and forming gas anneal (FGA) conditions on mobility and threshold voltage ( VT ) instability of high-mobility 4H-SiC MOSFETs using lanthanum silicate (LaSiOx) interface engineering. MOSFETs with LaSiOx after high-temperature FGA show significantly improved VT reliability under positive gate bias. It is found that both the thickness of the initial lanthanum-rich layer and the FGA temperature profoundly influence MOSFET mobility and VT instability under positive bias. There is a tradeoff between mobility and VT shift under positive bias.

KW - Atomic layer deposition (ALD)

KW - Forming gas anneal (FGA) lanthanum silicate (LaSiO)

KW - Mobility SiC

KW - threshold voltage

UR - https://www.scopus.com/pages/publications/85056186621

U2 - 10.1109/TED.2018.2875094

DO - 10.1109/TED.2018.2875094

M3 - Article

SN - 0018-9383

VL - 66

SP - 539

EP - 545

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 1

M1 - 8521701

ER -

Effects of LaSiO_x Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs with LaSiO_x

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Keywords

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