Effects of microstructure on photoluminescence of SrS:Eu2+, Sm3+ thin films

Susan Z. Hua; L. Salamanca-Riba; M. Wuttg; P. K. Soltani

doi:10.1557/proc-301-359

Effects of microstructure on photoluminescence of SrS:Eu²⁺, Sm³⁺ thin films

Susan Z. Hua
, L. Salamanca-Riba
, M. Wuttg
, P. K. Soltani

Department of Mechanical and Aerospace Engineering

University at Buffalo

University of Maryland, College Park

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The microstructure and its effects on the photoluminescence properties of SrS:Eu²⁺, Sm³⁺ thin films grown with different conditions were studied by transmission electron microscopy, x-ray diffraction and photoluminescence techniques. The SrS:Eu²⁺, Sm³⁺ thin films were prepared by e-beam evaporation at different substrate temperatures and growth rates. Both of these growth conditions affect the crystallinity of thin films. The Sm³⁺ emission is stronger in the films grown at higher growth rates and at an optimum substrate temperature. We believe that the stronger Sm³⁺ emission is due to the higher population of Sm trivalent charge states in thin films. Further increase of the substrate temperature increases the grain size in the films, but has no significant effect on the PL emission properties. In contrast, the Eu²⁺ emission is less sensitive to growth conditions.

Original language	English
Title of host publication	Rare Earth Doped Semiconductors
Publisher	Publ by Materials Research Society
Pages	359-364
Number of pages	6
ISBN (Print)	1558991972, 9781558991972
DOIs	https://doi.org/10.1557/proc-301-359
State	Published - 1993
Event	Proceedings of the 1993 Materials Society Spring Meeting - San Francisco, CA, USA Duration: Apr 13 1993 → Apr 15 1993

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	301

Conference

Conference	Proceedings of the 1993 Materials Society Spring Meeting
City	San Francisco, CA, USA
Period	04/13/93 → 04/15/93

Access to Document

10.1557/proc-301-359

Cite this

@inproceedings{fc63b0fbbad34fe39ed5a556449fedd1,

title = "Effects of microstructure on photoluminescence of SrS:Eu2+, Sm3+ thin films",

abstract = "The microstructure and its effects on the photoluminescence properties of SrS:Eu2+, Sm3+ thin films grown with different conditions were studied by transmission electron microscopy, x-ray diffraction and photoluminescence techniques. The SrS:Eu2+, Sm3+ thin films were prepared by e-beam evaporation at different substrate temperatures and growth rates. Both of these growth conditions affect the crystallinity of thin films. The Sm3+ emission is stronger in the films grown at higher growth rates and at an optimum substrate temperature. We believe that the stronger Sm3+ emission is due to the higher population of Sm trivalent charge states in thin films. Further increase of the substrate temperature increases the grain size in the films, but has no significant effect on the PL emission properties. In contrast, the Eu2+ emission is less sensitive to growth conditions.",

author = "Hua, \{Susan Z.\} and L. Salamanca-Riba and M. Wuttg and Soltani, \{P. K.\}",

year = "1993",

doi = "10.1557/proc-301-359",

language = "English",

isbn = "1558991972",

series = "Materials Research Society Symposium Proceedings",

publisher = "Publ by Materials Research Society",

pages = "359--364",

booktitle = "Rare Earth Doped Semiconductors",

note = "Proceedings of the 1993 Materials Society Spring Meeting ; Conference date: 13-04-1993 Through 15-04-1993",

}

Hua, SZ, Salamanca-Riba, L, Wuttg, M & Soltani, PK 1993, Effects of microstructure on photoluminescence of SrS:Eu²⁺, Sm³⁺ thin films. in Rare Earth Doped Semiconductors. Materials Research Society Symposium Proceedings, vol. 301, Publ by Materials Research Society, pp. 359-364, Proceedings of the 1993 Materials Society Spring Meeting, San Francisco, CA, USA, 04/13/93. https://doi.org/10.1557/proc-301-359

Effects of microstructure on photoluminescence of SrS:Eu²⁺, Sm³⁺ thin films. / Hua, Susan Z.; Salamanca-Riba, L.; Wuttg, M. et al.
Rare Earth Doped Semiconductors. Publ by Materials Research Society, 1993. p. 359-364 (Materials Research Society Symposium Proceedings; Vol. 301).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effects of microstructure on photoluminescence of SrS:Eu2+, Sm3+ thin films

AU - Hua, Susan Z.

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AU - Wuttg, M.

AU - Soltani, P. K.

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N2 - The microstructure and its effects on the photoluminescence properties of SrS:Eu2+, Sm3+ thin films grown with different conditions were studied by transmission electron microscopy, x-ray diffraction and photoluminescence techniques. The SrS:Eu2+, Sm3+ thin films were prepared by e-beam evaporation at different substrate temperatures and growth rates. Both of these growth conditions affect the crystallinity of thin films. The Sm3+ emission is stronger in the films grown at higher growth rates and at an optimum substrate temperature. We believe that the stronger Sm3+ emission is due to the higher population of Sm trivalent charge states in thin films. Further increase of the substrate temperature increases the grain size in the films, but has no significant effect on the PL emission properties. In contrast, the Eu2+ emission is less sensitive to growth conditions.

AB - The microstructure and its effects on the photoluminescence properties of SrS:Eu2+, Sm3+ thin films grown with different conditions were studied by transmission electron microscopy, x-ray diffraction and photoluminescence techniques. The SrS:Eu2+, Sm3+ thin films were prepared by e-beam evaporation at different substrate temperatures and growth rates. Both of these growth conditions affect the crystallinity of thin films. The Sm3+ emission is stronger in the films grown at higher growth rates and at an optimum substrate temperature. We believe that the stronger Sm3+ emission is due to the higher population of Sm trivalent charge states in thin films. Further increase of the substrate temperature increases the grain size in the films, but has no significant effect on the PL emission properties. In contrast, the Eu2+ emission is less sensitive to growth conditions.

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