Effects of Na+ impurities on the linewidth of intersubband resonances in Si MOS structures

E. Glaser; R. Czaputa; B. D. McCombe

doi:10.1016/0038-1098(85)90594-0

Effects of Na⁺ impurities on the linewidth of intersubband resonances in Si MOS structures

E. Glaser
, R. Czaputa
, B. D. McCombe

Physics

University at Buffalo

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

A far infrared (FIR) optical study has been carried out at 4.2°K on large gate area (100) Si-MOSFETs whose oxides were purposely contaminated with mobile Na⁺ ions ("impurities") during processing. At high inversion layer densities the intersubband resonance linewidths as a function of positive oxide charge density are found to be correlated with the corresponding scattering rates determined from the effective mobilities. These results are in good agreement with a calculation for short range scatterers.

Original language	English
Pages (from-to)	715-719
Number of pages	5
Journal	Solid State Communications
Volume	54
Issue number	8
DOIs	https://doi.org/10.1016/0038-1098(85)90594-0
State	Published - May 1985

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title = "Effects of Na+ impurities on the linewidth of intersubband resonances in Si MOS structures",

abstract = "A far infrared (FIR) optical study has been carried out at 4.2°K on large gate area (100) Si-MOSFETs whose oxides were purposely contaminated with mobile Na+ ions ({"}impurities{"}) during processing. At high inversion layer densities the intersubband resonance linewidths as a function of positive oxide charge density are found to be correlated with the corresponding scattering rates determined from the effective mobilities. These results are in good agreement with a calculation for short range scatterers.",

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T1 - Effects of Na+ impurities on the linewidth of intersubband resonances in Si MOS structures

AU - Glaser, E.

AU - Czaputa, R.

AU - McCombe, B. D.

PY - 1985/5

Y1 - 1985/5

N2 - A far infrared (FIR) optical study has been carried out at 4.2°K on large gate area (100) Si-MOSFETs whose oxides were purposely contaminated with mobile Na+ ions ("impurities") during processing. At high inversion layer densities the intersubband resonance linewidths as a function of positive oxide charge density are found to be correlated with the corresponding scattering rates determined from the effective mobilities. These results are in good agreement with a calculation for short range scatterers.

AB - A far infrared (FIR) optical study has been carried out at 4.2°K on large gate area (100) Si-MOSFETs whose oxides were purposely contaminated with mobile Na+ ions ("impurities") during processing. At high inversion layer densities the intersubband resonance linewidths as a function of positive oxide charge density are found to be correlated with the corresponding scattering rates determined from the effective mobilities. These results are in good agreement with a calculation for short range scatterers.

UR - https://www.scopus.com/pages/publications/0022059860

U2 - 10.1016/0038-1098(85)90594-0

DO - 10.1016/0038-1098(85)90594-0

M3 - Article

SN - 0038-1098

VL - 54

SP - 715

EP - 719

JO - Solid State Communications

JF - Solid State Communications

IS - 8

ER -

Effects of Na⁺ impurities on the linewidth of intersubband resonances in Si MOS structures

Abstract

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