Effects of the Undoped Layer on Characteristics of Amorphous Silicon Schottky Diodes

M. K. Han; W. A. Anderson; Y. Onuma; P. Sung; R. Lahri; J. Coleman

doi:10.1109/EDL.1981.25400

Effects of the Undoped Layer on Characteristics of Amorphous Silicon Schottky Diodes

M. K. Han
, W. A. Anderson
, Y. Onuma
, P. Sung
, R. Lahri
, J. Coleman

Department of Electrical Engineering

University at Buffalo

SUNY Buffalo
Plasma Physics Corp

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The effects of undoped layer thickness on the dark and illuminated I–V characteristics of hydrogenated amorphous silicon Schottky barrier solar cells are investigated. Schottky barrier (S.B.) metals having different work function (Cr and Pd) were deposited on the 0.22 µm–1.45 µm thick a-Si:H films. Photovoltaic performance, J_sc, V_oc, FF and efficiency, are independent of thickness of the undoped layer if film thickness is larger than the depletion region width. J_sc and V_oc are controlled by S.B. metal and FF is independent of S.B. metal. Dark I–V characteristics depend on both S.B. metal and device thickness suggesting a barrier controlled space charge limited phenomena. Variation of turn-on (threshold) voltage with undoped layer thickness can be applied to the design of switching and memory devices.

Original language	English
Pages (from-to)	198-200
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	2
Issue number	8
DOIs	https://doi.org/10.1109/EDL.1981.25400
State	Published - Aug 1981

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10.1109/EDL.1981.25400

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title = "Effects of the Undoped Layer on Characteristics of Amorphous Silicon Schottky Diodes",

abstract = "The effects of undoped layer thickness on the dark and illuminated I–V characteristics of hydrogenated amorphous silicon Schottky barrier solar cells are investigated. Schottky barrier (S.B.) metals having different work function (Cr and Pd) were deposited on the 0.22 µm–1.45 µm thick a-Si:H films. Photovoltaic performance, Jsc, Voc, FF and efficiency, are independent of thickness of the undoped layer if film thickness is larger than the depletion region width. Jsc and Voc are controlled by S.B. metal and FF is independent of S.B. metal. Dark I–V characteristics depend on both S.B. metal and device thickness suggesting a barrier controlled space charge limited phenomena. Variation of turn-on (threshold) voltage with undoped layer thickness can be applied to the design of switching and memory devices.",

author = "Han, \{M. K.\} and Anderson, \{W. A.\} and Y. Onuma and P. Sung and R. Lahri and J. Coleman",

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doi = "10.1109/EDL.1981.25400",

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T1 - Effects of the Undoped Layer on Characteristics of Amorphous Silicon Schottky Diodes

AU - Han, M. K.

AU - Anderson, W. A.

AU - Onuma, Y.

AU - Sung, P.

AU - Lahri, R.

AU - Coleman, J.

PY - 1981/8

Y1 - 1981/8

N2 - The effects of undoped layer thickness on the dark and illuminated I–V characteristics of hydrogenated amorphous silicon Schottky barrier solar cells are investigated. Schottky barrier (S.B.) metals having different work function (Cr and Pd) were deposited on the 0.22 µm–1.45 µm thick a-Si:H films. Photovoltaic performance, Jsc, Voc, FF and efficiency, are independent of thickness of the undoped layer if film thickness is larger than the depletion region width. Jsc and Voc are controlled by S.B. metal and FF is independent of S.B. metal. Dark I–V characteristics depend on both S.B. metal and device thickness suggesting a barrier controlled space charge limited phenomena. Variation of turn-on (threshold) voltage with undoped layer thickness can be applied to the design of switching and memory devices.

AB - The effects of undoped layer thickness on the dark and illuminated I–V characteristics of hydrogenated amorphous silicon Schottky barrier solar cells are investigated. Schottky barrier (S.B.) metals having different work function (Cr and Pd) were deposited on the 0.22 µm–1.45 µm thick a-Si:H films. Photovoltaic performance, Jsc, Voc, FF and efficiency, are independent of thickness of the undoped layer if film thickness is larger than the depletion region width. Jsc and Voc are controlled by S.B. metal and FF is independent of S.B. metal. Dark I–V characteristics depend on both S.B. metal and device thickness suggesting a barrier controlled space charge limited phenomena. Variation of turn-on (threshold) voltage with undoped layer thickness can be applied to the design of switching and memory devices.

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U2 - 10.1109/EDL.1981.25400

DO - 10.1109/EDL.1981.25400

M3 - Article

SN - 0741-3106

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SP - 198

EP - 200

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

ER -

Effects of the Undoped Layer on Characteristics of Amorphous Silicon Schottky Diodes

Abstract

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