@inproceedings{4d04736071534745ac6040176936ab06,
title = "Effects of zinc and tellurium doping on minority carrier recombination in lattice-matched and lattice-mismatched InGaAs/InP epitaxial layers and thermophotovoltaic cells",
abstract = "The results of study of minority carrier lifetime in p-type and n-type InGaAs double heterostrcutures (DH) and thermophotovoltaic (TPV) cells with InPAs step-graded buffer layers grown on InP substrates are summarized. The active layer carrier concentration was varied in the range from 1015 to 1018 cm-3. The carrier lifetime constants were determined from photoluminescence (PL) transient and frequency responses under low-injection conditions. The rapid decrease of electron lifetime with decrease of excitation was observed in p-type InGaAs DHs and was attributed to capture of electrons on positively-charged deep-donor recombination centers. It was found that Te-doping of the InPAs buffer layers improves the low-injection electron lifetime. Temperature dependences of radiative efficiency and minority carrier lifetime were studied in sets of DHs with different doping level in order to separate the radiative and non-radiative recombination processes.",
author = "D. Donetsky and S. Anikeev and N. Gu and M. Dashiell and H. Ehsani and F. Newman and M. Wanlass and C. Wang",
year = "2006",
doi = "10.1109/WCPEC.2006.279568",
language = "English",
isbn = "1424400163",
series = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",
publisher = "IEEE Computer Society",
pages = "764--767",
booktitle = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",
note = "2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 ; Conference date: 07-05-2006 Through 12-05-2006",
}