Electric-field control of ferromagnetism in GaSb/Mn digital alloys

G. B. Kim; M. Cheon; S. Wang; H. Luo; B. D. McCombe; X. Liu; Y. Sasaki; T. Wojtowicz; J. K. Furdyna

doi:10.1016/j.physe.2003.08.033

Electric-field control of ferromagnetism in GaSb/Mn digital alloys

G. B. Kim
, M. Cheon
, S. Wang
, H. Luo
, B. D. McCombe
, X. Liu
, Y. Sasaki
, T. Wojtowicz
, J. K. Furdyna

Physics

University at Buffalo

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

We have investigated the dependence of ferromagnetism in GaSb/Mn digital alloys on applied electric bias perpendicular to the digital layers. The remanent Hall resistance determined from hysteresis loops in R_Hall vs. magnetic field was used as a measure of the ferromagnetism present in two samples at temperatures between 5 and 60 K. With applied gate bias, the remanent Hall resistance measured in gated Hall bars was found to change systematically with applied bias. The changes agree qualitatively with changes in carrier concentration determined from the sheet resistance vs. bias. Ferromagnetism in these samples can be turned on and off with applied bias near the Curie temperature (as high as 60 K in one sample).

Original language	English
Pages (from-to)	355-359
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	20
Issue number	3-4
DOIs	https://doi.org/10.1016/j.physe.2003.08.033
State	Published - Jan 2004
Event	Proceedings of the 11th International Conference on Narrow Gap - Buffalo, NY., United States Duration: Jun 16 2003 → Jun 20 2003

Keywords

Ferromagnetism
Gated
Magnetotransport
Spintronics

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10.1016/j.physe.2003.08.033

Cite this

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title = "Electric-field control of ferromagnetism in GaSb/Mn digital alloys",

abstract = "We have investigated the dependence of ferromagnetism in GaSb/Mn digital alloys on applied electric bias perpendicular to the digital layers. The remanent Hall resistance determined from hysteresis loops in RHall vs. magnetic field was used as a measure of the ferromagnetism present in two samples at temperatures between 5 and 60 K. With applied gate bias, the remanent Hall resistance measured in gated Hall bars was found to change systematically with applied bias. The changes agree qualitatively with changes in carrier concentration determined from the sheet resistance vs. bias. Ferromagnetism in these samples can be turned on and off with applied bias near the Curie temperature (as high as 60 K in one sample).",

keywords = "Ferromagnetism, Gated, Magnetotransport, Spintronics",

author = "Kim, \{G. B.\} and M. Cheon and S. Wang and H. Luo and McCombe, \{B. D.\} and X. Liu and Y. Sasaki and T. Wojtowicz and Furdyna, \{J. K.\}",

year = "2004",

month = jan,

doi = "10.1016/j.physe.2003.08.033",

language = "English",

volume = "20",

pages = "355--359",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "3-4",

note = "Proceedings of the 11th International Conference on Narrow Gap ; Conference date: 16-06-2003 Through 20-06-2003",

}

TY - JOUR

T1 - Electric-field control of ferromagnetism in GaSb/Mn digital alloys

AU - Kim, G. B.

AU - Cheon, M.

AU - Wang, S.

AU - Luo, H.

AU - McCombe, B. D.

AU - Liu, X.

AU - Sasaki, Y.

AU - Wojtowicz, T.

AU - Furdyna, J. K.

PY - 2004/1

Y1 - 2004/1

N2 - We have investigated the dependence of ferromagnetism in GaSb/Mn digital alloys on applied electric bias perpendicular to the digital layers. The remanent Hall resistance determined from hysteresis loops in RHall vs. magnetic field was used as a measure of the ferromagnetism present in two samples at temperatures between 5 and 60 K. With applied gate bias, the remanent Hall resistance measured in gated Hall bars was found to change systematically with applied bias. The changes agree qualitatively with changes in carrier concentration determined from the sheet resistance vs. bias. Ferromagnetism in these samples can be turned on and off with applied bias near the Curie temperature (as high as 60 K in one sample).

AB - We have investigated the dependence of ferromagnetism in GaSb/Mn digital alloys on applied electric bias perpendicular to the digital layers. The remanent Hall resistance determined from hysteresis loops in RHall vs. magnetic field was used as a measure of the ferromagnetism present in two samples at temperatures between 5 and 60 K. With applied gate bias, the remanent Hall resistance measured in gated Hall bars was found to change systematically with applied bias. The changes agree qualitatively with changes in carrier concentration determined from the sheet resistance vs. bias. Ferromagnetism in these samples can be turned on and off with applied bias near the Curie temperature (as high as 60 K in one sample).

KW - Ferromagnetism

KW - Gated

KW - Magnetotransport

KW - Spintronics

UR - https://www.scopus.com/pages/publications/0345868262

U2 - 10.1016/j.physe.2003.08.033

DO - 10.1016/j.physe.2003.08.033

M3 - Conference article

SN - 1386-9477

VL - 20

SP - 355

EP - 359

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 3-4

T2 - Proceedings of the 11th International Conference on Narrow Gap

Y2 - 16 June 2003 through 20 June 2003

ER -

Electric-field control of ferromagnetism in GaSb/Mn digital alloys

Abstract

Keywords

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