@inproceedings{0eeeab90fd174c2795ec70e3f9c839b3,
title = "Electrical and Thermal evaluation of Ga2O3 devices in MMC-HVDC systems",
abstract = "Modular Multilevel Converters (MMCs) are the foremost choice for High Voltage dc transmission systems. Gallium oxide (Ga2O3) is an ultra-wide bandgap semiconductor material which has the potential to significantly improve the MMC. This paper presents the impact of replacing Silicon devices with Ga2O3 devices in an MMC. This is demonstrated by simulating two systems - a 200 submodule MMC representing a Si based system and a 40 submodule system representing a Ga2O3 based system. The potential advantages of the Ga2O3 system over the Si systems are discussed. Poor thermal conductivity of Ga2O3 is a hindrance to its development for MMCs. To understand the thermal behavior of Ga2O3 MOSFETs, electrothermal simulations of a lateral Ga2O3 MOSFET were performed in Silvaco ATLAS. Various cooling methods and its impact on Ga2O3 MOSFETs are also presented. Due to limited literature available on Ga2O3 power MOSFETs, the analysis assumes ideal system and device level behavior of Ga2O3 devices.",
keywords = "Gallium Oxide, Modular Multilevel Converter, Ultra-wide Bandgap",
author = "Arindam Sircar and Sudipto Saha and Uttam Singisetti and Xiu Yao",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 IEEE Energy Conversion Congress and Exposition, ECCE 2024 ; Conference date: 20-10-2024 Through 24-10-2024",
year = "2024",
doi = "10.1109/ECCE55643.2024.10861288",
language = "English",
series = "2024 IEEE Energy Conversion Congress and Exposition, ECCE 2024 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "6985--6989",
booktitle = "2024 IEEE Energy Conversion Congress and Exposition, ECCE 2024 - Proceedings",
address = "United States",
}