Electromigration in passivated Cu interconnects studied by transmission x-ray microscopy

G. Schneider; M. A. Meyer; G. Denbeaux; E. Anderson; B. Bates; A. Pearson; C. Knöchel; D. Hambach; E. A. Stach; E. Zschech

doi:10.1116/1.1523403

Electromigration in passivated Cu interconnects studied by transmission x-ray microscopy

G. Schneider
, M. A. Meyer
, G. Denbeaux
, E. Anderson
, B. Bates
, A. Pearson
, C. Knöchel
, D. Hambach
, E. A. Stach
, E. Zschech

Nanoscale Science and Engineering

University at Albany

Lawrence Berkeley National Laboratory
Global Foundries, Inc.
University of Göttingen

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

A method to visualize void formation in buried copper interconnect structures was made. As such, observations indicate that voids grow inside the copper and move along grain boundaries toward the interface where they agglomerate. To provide information about the exact location of voids during an EM experiment and to measure the mass transport in bulk copper quantitatively, time-resolved tomography based on x-ray micrographs will be performed in future in situ EM experiments.

Original language	English
Pages (from-to)	3089-3094
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	6
DOIs	https://doi.org/10.1116/1.1523403
State	Published - Nov 2002

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Schneider, G., Meyer, M. A., Denbeaux, G., Anderson, E., Bates, B., Pearson, A., Knöchel, C., Hambach, D., Stach, E. A., & Zschech, E. (2002). Electromigration in passivated Cu interconnects studied by transmission x-ray microscopy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20(6), 3089-3094. https://doi.org/10.1116/1.1523403

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abstract = "A method to visualize void formation in buried copper interconnect structures was made. As such, observations indicate that voids grow inside the copper and move along grain boundaries toward the interface where they agglomerate. To provide information about the exact location of voids during an EM experiment and to measure the mass transport in bulk copper quantitatively, time-resolved tomography based on x-ray micrographs will be performed in future in situ EM experiments.",

author = "G. Schneider and Meyer, \{M. A.\} and G. Denbeaux and E. Anderson and B. Bates and A. Pearson and C. Kn{\"o}chel and D. Hambach and Stach, \{E. A.\} and E. Zschech",

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Schneider, G, Meyer, MA, Denbeaux, G, Anderson, E, Bates, B, Pearson, A, Knöchel, C, Hambach, D, Stach, EA & Zschech, E 2002, 'Electromigration in passivated Cu interconnects studied by transmission x-ray microscopy', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 20, no. 6, pp. 3089-3094. https://doi.org/10.1116/1.1523403

TY - JOUR

T1 - Electromigration in passivated Cu interconnects studied by transmission x-ray microscopy

AU - Schneider, G.

AU - Meyer, M. A.

AU - Denbeaux, G.

AU - Anderson, E.

AU - Bates, B.

AU - Pearson, A.

AU - Knöchel, C.

AU - Hambach, D.

AU - Stach, E. A.

AU - Zschech, E.

PY - 2002/11

Y1 - 2002/11

N2 - A method to visualize void formation in buried copper interconnect structures was made. As such, observations indicate that voids grow inside the copper and move along grain boundaries toward the interface where they agglomerate. To provide information about the exact location of voids during an EM experiment and to measure the mass transport in bulk copper quantitatively, time-resolved tomography based on x-ray micrographs will be performed in future in situ EM experiments.

AB - A method to visualize void formation in buried copper interconnect structures was made. As such, observations indicate that voids grow inside the copper and move along grain boundaries toward the interface where they agglomerate. To provide information about the exact location of voids during an EM experiment and to measure the mass transport in bulk copper quantitatively, time-resolved tomography based on x-ray micrographs will be performed in future in situ EM experiments.

UR - https://www.scopus.com/pages/publications/0036874022

U2 - 10.1116/1.1523403

DO - 10.1116/1.1523403

M3 - Article

SN - 1071-1023

VL - 20

SP - 3089

EP - 3094

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

Electromigration in passivated Cu interconnects studied by transmission x-ray microscopy

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