Electron effective mass in InuGa1-uPvAs1-v for 0 ≤ v ≤ 1

Ernesto H. Perea; Emilio Mendez; Clifton G. Fonstad

doi:10.1007/BF02670862

Electron effective mass in In_uGa_1-uP_vAs_1-v for 0 ≤ v ≤ 1

Ernesto H. Perea
, Emilio Mendez
, Clifton G. Fonstad

Physics and Astronomy

Stony Brook University

Massachusetts Institute of Technology

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The electron effective mass in In_uGa_1-uP_vAs_1-v has been measured on seven samples lattice-matched to InP and evenly spaced in values of v between 0 and 1, using the temperature dependence of the amplitude of the Shubnikov-de Haas oscillations at high magnetic fields. Values of the carrier concentrations, Hall mobilities and Dingle temperatures measured on these samples are also reported.

Original language	English
Pages (from-to)	459-466
Number of pages	8
Journal	Journal of Electronic Materials
Volume	9
Issue number	2
DOIs	https://doi.org/10.1007/BF02670862
State	Published - Mar 1980

Keywords

InGaAsP
InP
Shubnikov-de Haas
effective mass
transport studies

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10.1007/BF02670862

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title = "Electron effective mass in InuGa1-uPvAs1-v for 0 ≤ v ≤ 1",

abstract = "The electron effective mass in InuGa1-uPvAs1-v has been measured on seven samples lattice-matched to InP and evenly spaced in values of v between 0 and 1, using the temperature dependence of the amplitude of the Shubnikov-de Haas oscillations at high magnetic fields. Values of the carrier concentrations, Hall mobilities and Dingle temperatures measured on these samples are also reported.",

keywords = "InGaAsP, InP, Shubnikov-de Haas, effective mass, transport studies",

author = "Perea, \{Ernesto H.\} and Emilio Mendez and Fonstad, \{Clifton G.\}",

year = "1980",

month = mar,

doi = "10.1007/BF02670862",

language = "English",

volume = "9",

pages = "459--466",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

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number = "2",

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T1 - Electron effective mass in InuGa1-uPvAs1-v for 0 ≤ v ≤ 1

AU - Perea, Ernesto H.

AU - Mendez, Emilio

AU - Fonstad, Clifton G.

PY - 1980/3

Y1 - 1980/3

N2 - The electron effective mass in InuGa1-uPvAs1-v has been measured on seven samples lattice-matched to InP and evenly spaced in values of v between 0 and 1, using the temperature dependence of the amplitude of the Shubnikov-de Haas oscillations at high magnetic fields. Values of the carrier concentrations, Hall mobilities and Dingle temperatures measured on these samples are also reported.

AB - The electron effective mass in InuGa1-uPvAs1-v has been measured on seven samples lattice-matched to InP and evenly spaced in values of v between 0 and 1, using the temperature dependence of the amplitude of the Shubnikov-de Haas oscillations at high magnetic fields. Values of the carrier concentrations, Hall mobilities and Dingle temperatures measured on these samples are also reported.

KW - InGaAsP

KW - InP

KW - Shubnikov-de Haas

KW - effective mass

KW - transport studies

UR - https://www.scopus.com/pages/publications/0018997449

U2 - 10.1007/BF02670862

DO - 10.1007/BF02670862

M3 - Article

SN - 0361-5235

VL - 9

SP - 459

EP - 466

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 2

ER -

Electron effective mass in In_uGa_1-uP_vAs_1-v for 0 ≤ v ≤ 1

Abstract

Keywords

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