Electron scattering in buried InGaAs MOSFET channel with HfO2 gate oxide

S. Oktyabrsky; P. Nagaiah; V. Tokranov; S. Koveshnikov; M. Yakimov; R. Kambhampati; R. Moore; W. Tsai

doi:10.1557/proc-1155-c02-03

Electron scattering in buried InGaAs MOSFET channel with HfO₂ gate oxide

S. Oktyabrsky
, P. Nagaiah
, V. Tokranov
, S. Koveshnikov
, M. Yakimov
, R. Kambhampati
, R. Moore
, W. Tsai

University at Albany

SUNY Albany
Intel

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Group III-V semiconductor materials are being studied as potential replacements for conventional CMOS technology due to their better electron transport properties. However, the excess scattering of carriers in MOSFET channel due to high-k gate oxide interface significantly depreciates the benefits of III-V high-mobility channel materials. We present results on Hall electron mobility of buried QW structures influenced by remote scattering due to InGaAs/HfO₂ interface. Mobility in In_0.77Ga _0.23As QWs degraded from 12000 to 1200 cm²/V-s and the mobility vs. temperature slope changed from T^-1.2 to almost T ^+1.0 in 77-300 K range when the barrier thickness is reduced from 50 to 0 nm. This mobility change is attributed to remote Coulomb scattering due to charges and dipoles at semiconductor/oxide interface. Elimination of the InGaAs/HfO₂ interface via introduction of SiO_x interface layer formed by oxidation of thin a-Si passivation layer was found to improve the channel mobility. The mobility vs. sheet carrier density shows the maximum close to 2×10¹²cm^-2.

Original language	English
Title of host publication	CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications
Publisher	Materials Research Society
Pages	125-130
Number of pages	6
ISBN (Print)	9781605111285
DOIs	https://doi.org/10.1557/proc-1155-c02-03
State	Published - 2009
Event	2009 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 14 2009 → Apr 16 2009

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1155

Conference

Conference	2009 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	04/14/09 → 04/16/09

Access to Document

10.1557/proc-1155-c02-03

Cite this

Oktyabrsky, S., Nagaiah, P., Tokranov, V., Koveshnikov, S., Yakimov, M., Kambhampati, R., Moore, R., & Tsai, W. (2009). Electron scattering in buried InGaAs MOSFET channel with HfO₂ gate oxide. In CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications (pp. 125-130). (Materials Research Society Symposium Proceedings; Vol. 1155). Materials Research Society. https://doi.org/10.1557/proc-1155-c02-03

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title = "Electron scattering in buried InGaAs MOSFET channel with HfO2 gate oxide",

abstract = "Group III-V semiconductor materials are being studied as potential replacements for conventional CMOS technology due to their better electron transport properties. However, the excess scattering of carriers in MOSFET channel due to high-k gate oxide interface significantly depreciates the benefits of III-V high-mobility channel materials. We present results on Hall electron mobility of buried QW structures influenced by remote scattering due to InGaAs/HfO2 interface. Mobility in In0.77Ga 0.23As QWs degraded from 12000 to 1200 cm2/V-s and the mobility vs. temperature slope changed from T-1.2 to almost T +1.0 in 77-300 K range when the barrier thickness is reduced from 50 to 0 nm. This mobility change is attributed to remote Coulomb scattering due to charges and dipoles at semiconductor/oxide interface. Elimination of the InGaAs/HfO2 interface via introduction of SiOx interface layer formed by oxidation of thin a-Si passivation layer was found to improve the channel mobility. The mobility vs. sheet carrier density shows the maximum close to 2×1012cm-2.",

author = "S. Oktyabrsky and P. Nagaiah and V. Tokranov and S. Koveshnikov and M. Yakimov and R. Kambhampati and R. Moore and W. Tsai",

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doi = "10.1557/proc-1155-c02-03",

language = "English",

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series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

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note = "2009 MRS Spring Meeting ; Conference date: 14-04-2009 Through 16-04-2009",

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Oktyabrsky, S, Nagaiah, P, Tokranov, V, Koveshnikov, S, Yakimov, M, Kambhampati, R, Moore, R & Tsai, W 2009, Electron scattering in buried InGaAs MOSFET channel with HfO₂ gate oxide. in CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications. Materials Research Society Symposium Proceedings, vol. 1155, Materials Research Society, pp. 125-130, 2009 MRS Spring Meeting, San Francisco, CA, United States, 04/14/09. https://doi.org/10.1557/proc-1155-c02-03

Electron scattering in buried InGaAs MOSFET channel with HfO₂ gate oxide. / Oktyabrsky, S.; Nagaiah, P.; Tokranov, V. et al.
CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications. Materials Research Society, 2009. p. 125-130 (Materials Research Society Symposium Proceedings; Vol. 1155).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Oktyabrsky, S.

AU - Nagaiah, P.

AU - Tokranov, V.

AU - Koveshnikov, S.

AU - Yakimov, M.

AU - Kambhampati, R.

AU - Moore, R.

AU - Tsai, W.

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N2 - Group III-V semiconductor materials are being studied as potential replacements for conventional CMOS technology due to their better electron transport properties. However, the excess scattering of carriers in MOSFET channel due to high-k gate oxide interface significantly depreciates the benefits of III-V high-mobility channel materials. We present results on Hall electron mobility of buried QW structures influenced by remote scattering due to InGaAs/HfO2 interface. Mobility in In0.77Ga 0.23As QWs degraded from 12000 to 1200 cm2/V-s and the mobility vs. temperature slope changed from T-1.2 to almost T +1.0 in 77-300 K range when the barrier thickness is reduced from 50 to 0 nm. This mobility change is attributed to remote Coulomb scattering due to charges and dipoles at semiconductor/oxide interface. Elimination of the InGaAs/HfO2 interface via introduction of SiOx interface layer formed by oxidation of thin a-Si passivation layer was found to improve the channel mobility. The mobility vs. sheet carrier density shows the maximum close to 2×1012cm-2.

AB - Group III-V semiconductor materials are being studied as potential replacements for conventional CMOS technology due to their better electron transport properties. However, the excess scattering of carriers in MOSFET channel due to high-k gate oxide interface significantly depreciates the benefits of III-V high-mobility channel materials. We present results on Hall electron mobility of buried QW structures influenced by remote scattering due to InGaAs/HfO2 interface. Mobility in In0.77Ga 0.23As QWs degraded from 12000 to 1200 cm2/V-s and the mobility vs. temperature slope changed from T-1.2 to almost T +1.0 in 77-300 K range when the barrier thickness is reduced from 50 to 0 nm. This mobility change is attributed to remote Coulomb scattering due to charges and dipoles at semiconductor/oxide interface. Elimination of the InGaAs/HfO2 interface via introduction of SiOx interface layer formed by oxidation of thin a-Si passivation layer was found to improve the channel mobility. The mobility vs. sheet carrier density shows the maximum close to 2×1012cm-2.

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