Electronic parameters and electronic structures in modulation-doped highly strained InxGa1-xAs/InyAl1-yAs coupled double quantum wells

T. W. Kim; D. C. Choo; K. H. Yoo; C. J. Meining; B. D. McCombe

doi:10.1016/j.ssc.2003.11.042

Electronic parameters and electronic structures in modulation-doped highly strained In_xGa_1-xAs/In_yAl_1-yAs coupled double quantum wells

T. W. Kim
, D. C. Choo
, K. H. Yoo
, C. J. Meining
, B. D. McCombe

Physics

University at Buffalo

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Electronic parameters of a two-dimensional electron gas (2DEG) in modulation-doped highly strained In_xGa_1-xAs/In _yAl_1-yAs coupled double quantum wells were investigated by performing Shubnikov-de Haas (S-dH), Van der Pauw Hall-effect, and cyclotron resonance measurements. The S-dH measurements and the fast Fourier transformation results for the S-dH at 1.5 K indicated the electron occupation of two subbands in the quantum well. The electron effective masses of the 2DEG were determined from the cyclotron resonance measurements, and satisfied qualitatively the nonparabolicity effects in the quantum wells. The electronic subband structures were calculated by using a self-consistent method.

Original language	English
Pages (from-to)	533-537
Number of pages	5
Journal	Solid State Communications
Volume	129
Issue number	8
DOIs	https://doi.org/10.1016/j.ssc.2003.11.042
State	Published - Feb 2004

Keywords

A. Quantum wells
D. Electronic states
D. Optical properties

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10.1016/j.ssc.2003.11.042

Cite this

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title = "Electronic parameters and electronic structures in modulation-doped highly strained InxGa1-xAs/InyAl1-yAs coupled double quantum wells",

abstract = "Electronic parameters of a two-dimensional electron gas (2DEG) in modulation-doped highly strained InxGa1-xAs/In yAl1-yAs coupled double quantum wells were investigated by performing Shubnikov-de Haas (S-dH), Van der Pauw Hall-effect, and cyclotron resonance measurements. The S-dH measurements and the fast Fourier transformation results for the S-dH at 1.5 K indicated the electron occupation of two subbands in the quantum well. The electron effective masses of the 2DEG were determined from the cyclotron resonance measurements, and satisfied qualitatively the nonparabolicity effects in the quantum wells. The electronic subband structures were calculated by using a self-consistent method.",

keywords = "A. Quantum wells, D. Electronic states, D. Optical properties",

author = "Kim, \{T. W.\} and Choo, \{D. C.\} and Yoo, \{K. H.\} and Meining, \{C. J.\} and McCombe, \{B. D.\}",

year = "2004",

month = feb,

doi = "10.1016/j.ssc.2003.11.042",

language = "English",

volume = "129",

pages = "533--537",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "8",

}

TY - JOUR

T1 - Electronic parameters and electronic structures in modulation-doped highly strained InxGa1-xAs/InyAl1-yAs coupled double quantum wells

AU - Kim, T. W.

AU - Choo, D. C.

AU - Yoo, K. H.

AU - Meining, C. J.

AU - McCombe, B. D.

PY - 2004/2

Y1 - 2004/2

N2 - Electronic parameters of a two-dimensional electron gas (2DEG) in modulation-doped highly strained InxGa1-xAs/In yAl1-yAs coupled double quantum wells were investigated by performing Shubnikov-de Haas (S-dH), Van der Pauw Hall-effect, and cyclotron resonance measurements. The S-dH measurements and the fast Fourier transformation results for the S-dH at 1.5 K indicated the electron occupation of two subbands in the quantum well. The electron effective masses of the 2DEG were determined from the cyclotron resonance measurements, and satisfied qualitatively the nonparabolicity effects in the quantum wells. The electronic subband structures were calculated by using a self-consistent method.

AB - Electronic parameters of a two-dimensional electron gas (2DEG) in modulation-doped highly strained InxGa1-xAs/In yAl1-yAs coupled double quantum wells were investigated by performing Shubnikov-de Haas (S-dH), Van der Pauw Hall-effect, and cyclotron resonance measurements. The S-dH measurements and the fast Fourier transformation results for the S-dH at 1.5 K indicated the electron occupation of two subbands in the quantum well. The electron effective masses of the 2DEG were determined from the cyclotron resonance measurements, and satisfied qualitatively the nonparabolicity effects in the quantum wells. The electronic subband structures were calculated by using a self-consistent method.

KW - A. Quantum wells

KW - D. Electronic states

KW - D. Optical properties

UR - https://www.scopus.com/pages/publications/0348046427

U2 - 10.1016/j.ssc.2003.11.042

DO - 10.1016/j.ssc.2003.11.042

M3 - Article

SN - 0038-1098

VL - 129

SP - 533

EP - 537

JO - Solid State Communications

JF - Solid State Communications

IS - 8

ER -

Electronic parameters and electronic structures in modulation-doped highly strained In_xGa_1-xAs/In_yAl_1-yAs coupled double quantum wells

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Keywords

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