Enhanced optical second-harmonic generation from the current-biased graphene/SiO2/Si(001) structure

Yong Q. An; Florence Nelson; Ji Ung Lee; Alain C. Diebold

doi:10.1021/nl4004514

Enhanced optical second-harmonic generation from the current-biased graphene/SiO₂/Si(001) structure

Yong Q. An
, Florence Nelson
, Ji Ung Lee
, Alain C. Diebold

Nanoscale Science and Engineering

University at Albany

SUNY Albany

Research output: Contribution to journal › Article › peer-review

80 Scopus citations

Abstract

We find that optical second-harmonic generation (SHG) in reflection from a chemical-vapor-deposition graphene monolayer transferred onto a SiO ₂/Si(001) substrate is enhanced about 3 times by the flow of direct current electric current in graphene. Measurements of rotational-anisotropy SHG revealed that the current-induced SHG from the current-biased graphene/SiO ₂/Si(001) structure undergoes a phase inversion as the measurement location on graphene is shifted laterally along the current flow direction. The enhancement is due to current-associated charge trapping at the graphene/SiO₂ interface, which introduces a vertical electric field across the SiO₂/Si interface that produces electric field-induced SHG. The phase inversion is due to the positive-to-negative polarity switch in the current direction of the trapped charges at the current-biased graphene/SiO₂ interface.

Original language	English
Pages (from-to)	2104-2109
Number of pages	6
Journal	Nano Letters
Volume	13
Issue number	5
DOIs	https://doi.org/10.1021/nl4004514
State	Published - May 8 2013

Keywords

Graphene
current-induced SHG
field-induced SHG
rotational anisotropy
second-harmonic generation

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10.1021/nl4004514

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title = "Enhanced optical second-harmonic generation from the current-biased graphene/SiO2/Si(001) structure",

abstract = "We find that optical second-harmonic generation (SHG) in reflection from a chemical-vapor-deposition graphene monolayer transferred onto a SiO 2/Si(001) substrate is enhanced about 3 times by the flow of direct current electric current in graphene. Measurements of rotational-anisotropy SHG revealed that the current-induced SHG from the current-biased graphene/SiO 2/Si(001) structure undergoes a phase inversion as the measurement location on graphene is shifted laterally along the current flow direction. The enhancement is due to current-associated charge trapping at the graphene/SiO2 interface, which introduces a vertical electric field across the SiO2/Si interface that produces electric field-induced SHG. The phase inversion is due to the positive-to-negative polarity switch in the current direction of the trapped charges at the current-biased graphene/SiO2 interface.",

keywords = "Graphene, current-induced SHG, field-induced SHG, rotational anisotropy, second-harmonic generation",

author = "An, \{Yong Q.\} and Florence Nelson and Lee, \{Ji Ung\} and Diebold, \{Alain C.\}",

year = "2013",

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doi = "10.1021/nl4004514",

language = "English",

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T1 - Enhanced optical second-harmonic generation from the current-biased graphene/SiO2/Si(001) structure

AU - An, Yong Q.

AU - Nelson, Florence

AU - Lee, Ji Ung

AU - Diebold, Alain C.

PY - 2013/5/8

Y1 - 2013/5/8

N2 - We find that optical second-harmonic generation (SHG) in reflection from a chemical-vapor-deposition graphene monolayer transferred onto a SiO 2/Si(001) substrate is enhanced about 3 times by the flow of direct current electric current in graphene. Measurements of rotational-anisotropy SHG revealed that the current-induced SHG from the current-biased graphene/SiO 2/Si(001) structure undergoes a phase inversion as the measurement location on graphene is shifted laterally along the current flow direction. The enhancement is due to current-associated charge trapping at the graphene/SiO2 interface, which introduces a vertical electric field across the SiO2/Si interface that produces electric field-induced SHG. The phase inversion is due to the positive-to-negative polarity switch in the current direction of the trapped charges at the current-biased graphene/SiO2 interface.

AB - We find that optical second-harmonic generation (SHG) in reflection from a chemical-vapor-deposition graphene monolayer transferred onto a SiO 2/Si(001) substrate is enhanced about 3 times by the flow of direct current electric current in graphene. Measurements of rotational-anisotropy SHG revealed that the current-induced SHG from the current-biased graphene/SiO 2/Si(001) structure undergoes a phase inversion as the measurement location on graphene is shifted laterally along the current flow direction. The enhancement is due to current-associated charge trapping at the graphene/SiO2 interface, which introduces a vertical electric field across the SiO2/Si interface that produces electric field-induced SHG. The phase inversion is due to the positive-to-negative polarity switch in the current direction of the trapped charges at the current-biased graphene/SiO2 interface.

KW - Graphene

KW - current-induced SHG

KW - field-induced SHG

KW - rotational anisotropy

KW - second-harmonic generation

UR - https://www.scopus.com/pages/publications/84877260773

U2 - 10.1021/nl4004514

DO - 10.1021/nl4004514

M3 - Article

SN - 1530-6984

VL - 13

SP - 2104

EP - 2109

JO - Nano Letters

JF - Nano Letters

IS - 5

ER -

Enhanced optical second-harmonic generation from the current-biased graphene/SiO₂/Si(001) structure

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Keywords

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