Abstract
Enhanced photo-collection and increased carrier lifetimes in semiconductor BiFeO3 (BFO) single nanowire under visible illumination have been reported in this paper. As a direct result of radial surface potential due to Fermi level pinning caused by high density of surface states in BFO nanowire, a highly efficient carrier separation has been observed. The measured carrier lifetimes in BFO nanowire are three orders magnitude higher than the reported values in bulk. We have obtained the equilibrium carrier concentration ~5.4×1017/cm3 and assumed a mobility value ~3cm2(V/s) at room temperature in the BFO nanowire. We believe that BFO nanowires with visible photo-response and long carrier life time are promising for nanoscale optoelectronic applications.
| Original language | English |
|---|---|
| Pages (from-to) | 240-248 |
| Number of pages | 9 |
| Journal | Nano Energy |
| Volume | 13 |
| DOIs | |
| State | Published - Apr 1 2015 |
Keywords
- BiFeO
- Carrier lifetime
- Fermi-level pinning
- Nanowires
- Photoresponse
- Surface states
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