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Enhanced photo-collection in single BiFeO3 nanowire due to carrier separation from radial surface field

  • K. Prashanthi
  • , P. Dhandharia
  • , N. Miriyala
  • , R. Gaikwad
  • , D. Barlage
  • , T. Thundat

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

Enhanced photo-collection and increased carrier lifetimes in semiconductor BiFeO3 (BFO) single nanowire under visible illumination have been reported in this paper. As a direct result of radial surface potential due to Fermi level pinning caused by high density of surface states in BFO nanowire, a highly efficient carrier separation has been observed. The measured carrier lifetimes in BFO nanowire are three orders magnitude higher than the reported values in bulk. We have obtained the equilibrium carrier concentration ~5.4×1017/cm3 and assumed a mobility value ~3cm2(V/s) at room temperature in the BFO nanowire. We believe that BFO nanowires with visible photo-response and long carrier life time are promising for nanoscale optoelectronic applications.

Original languageEnglish
Pages (from-to)240-248
Number of pages9
JournalNano Energy
Volume13
DOIs
StatePublished - Apr 1 2015

Keywords

  • BiFeO
  • Carrier lifetime
  • Fermi-level pinning
  • Nanowires
  • Photoresponse
  • Surface states

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