Enhanced thermal stability of laser diodes with shape-engineered quantum dot medium

V. Tokranov; M. Yakimov; A. Katsnelson; M. Lamberti; S. Oktyabrsky

doi:10.1063/1.1598645

Enhanced thermal stability of laser diodes with shape-engineered quantum dot medium

V. Tokranov
, M. Yakimov
, A. Katsnelson
, M. Lamberti
, S. Oktyabrsky

University at Albany

State University of New York (SUNY)

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

Enhanced thermal stability of laser diodes with shape-engineered quantum dot (QD) medium was investigated. QDs with a 6-nm thick overlayer with the subsequent heating step were found to have the highest photoluminescence intensity at room temperature. 1.22 μm edge-emitting laser with a triple-layer truncated QD gain medium showed room temperature threshold current density of 56 A/cm².

Original language	English
Pages (from-to)	833-835
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	5
DOIs	https://doi.org/10.1063/1.1598645
State	Published - Aug 4 2003

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title = "Enhanced thermal stability of laser diodes with shape-engineered quantum dot medium",

abstract = "Enhanced thermal stability of laser diodes with shape-engineered quantum dot (QD) medium was investigated. QDs with a 6-nm thick overlayer with the subsequent heating step were found to have the highest photoluminescence intensity at room temperature. 1.22 μm edge-emitting laser with a triple-layer truncated QD gain medium showed room temperature threshold current density of 56 A/cm2.",

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AU - Katsnelson, A.

AU - Lamberti, M.

AU - Oktyabrsky, S.

PY - 2003/8/4

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AB - Enhanced thermal stability of laser diodes with shape-engineered quantum dot (QD) medium was investigated. QDs with a 6-nm thick overlayer with the subsequent heating step were found to have the highest photoluminescence intensity at room temperature. 1.22 μm edge-emitting laser with a triple-layer truncated QD gain medium showed room temperature threshold current density of 56 A/cm2.

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U2 - 10.1063/1.1598645

DO - 10.1063/1.1598645

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VL - 83

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Enhanced thermal stability of laser diodes with shape-engineered quantum dot medium

Abstract

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