Epitaxial growth of aluminum nitride on sapphire and silicon

K. Dovidenko; S. Oktyabrsky; J. Narayan; M. Razeghi

Epitaxial growth of aluminum nitride on sapphire and silicon

K. Dovidenko
, S. Oktyabrsky
, J. Narayan
, M. Razeghi

Nanoscale Science and Engineering

University at Albany

North Carolina State University

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The microstructural characteristics of wide band gap semiconductor, hexagonal A1N thin films on Si(100), (111), and sapphire (0001) and (101̄2) were studied by transmission electron microscopy (TEM) and x-ray diffraction. The films were grown by MOCVD from TMA1 + NH₃ + N₂ gas mixtures. Different degrees of film crystallinity were observed for films grown on α-Al₂O₃ and Si substrates in different orientations. The epitaxial growth of high quality single crystalline A1N film on (0001) α-Al₂O₃ was demonstrated with a dislocation density of about 2·10¹⁰ cm^-2. The films on Si(111) and Si(100) substrates were textured with the c-axis of A1N being perpendicular to the substrate surface.

Original language	English
Pages (from-to)	1023-1028
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	358
State	Published - 1995
Event	Proceedings of the 1994 MRS Fall Meeting - Boston, MA, USA Duration: Nov 28 1994 → Nov 30 1994

Cite this

@article{13295a81561242598a535b7015ab0240,

title = "Epitaxial growth of aluminum nitride on sapphire and silicon",

abstract = "The microstructural characteristics of wide band gap semiconductor, hexagonal A1N thin films on Si(100), (111), and sapphire (0001) and (10{\=1}2) were studied by transmission electron microscopy (TEM) and x-ray diffraction. The films were grown by MOCVD from TMA1 + NH3 + N2 gas mixtures. Different degrees of film crystallinity were observed for films grown on α-Al2O3 and Si substrates in different orientations. The epitaxial growth of high quality single crystalline A1N film on (0001) α-Al2O3 was demonstrated with a dislocation density of about 2·1010 cm-2. The films on Si(111) and Si(100) substrates were textured with the c-axis of A1N being perpendicular to the substrate surface.",

author = "K. Dovidenko and S. Oktyabrsky and J. Narayan and M. Razeghi",

year = "1995",

language = "English",

volume = "358",

pages = "1023--1028",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Proceedings of the 1994 MRS Fall Meeting ; Conference date: 28-11-1994 Through 30-11-1994",

}

TY - JOUR

T1 - Epitaxial growth of aluminum nitride on sapphire and silicon

AU - Dovidenko, K.

AU - Oktyabrsky, S.

AU - Narayan, J.

AU - Razeghi, M.

PY - 1995

Y1 - 1995

N2 - The microstructural characteristics of wide band gap semiconductor, hexagonal A1N thin films on Si(100), (111), and sapphire (0001) and (101̄2) were studied by transmission electron microscopy (TEM) and x-ray diffraction. The films were grown by MOCVD from TMA1 + NH3 + N2 gas mixtures. Different degrees of film crystallinity were observed for films grown on α-Al2O3 and Si substrates in different orientations. The epitaxial growth of high quality single crystalline A1N film on (0001) α-Al2O3 was demonstrated with a dislocation density of about 2·1010 cm-2. The films on Si(111) and Si(100) substrates were textured with the c-axis of A1N being perpendicular to the substrate surface.

AB - The microstructural characteristics of wide band gap semiconductor, hexagonal A1N thin films on Si(100), (111), and sapphire (0001) and (101̄2) were studied by transmission electron microscopy (TEM) and x-ray diffraction. The films were grown by MOCVD from TMA1 + NH3 + N2 gas mixtures. Different degrees of film crystallinity were observed for films grown on α-Al2O3 and Si substrates in different orientations. The epitaxial growth of high quality single crystalline A1N film on (0001) α-Al2O3 was demonstrated with a dislocation density of about 2·1010 cm-2. The films on Si(111) and Si(100) substrates were textured with the c-axis of A1N being perpendicular to the substrate surface.

UR - https://www.scopus.com/pages/publications/0029225434

M3 - Conference article

SN - 0272-9172

VL - 358

SP - 1023

EP - 1028

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1994 MRS Fall Meeting

Y2 - 28 November 1994 through 30 November 1994

ER -

Epitaxial growth of aluminum nitride on sapphire and silicon

Abstract

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