Skip to main navigation Skip to search Skip to main content

Erratum: Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures (Appl. Phys. Lett. (2012) 101 (091601))

  • B. Mazumder
  • , M. H. Wong
  • , C. A. Hurni
  • , J. Y. Zhang
  • , U. K. Mishra
  • , J. S. Speck
  • University of California at Santa Barbara

Research output: Contribution to journalComment/debate

Original languageEnglish
Article number229902
JournalApplied Physics Letters
Volume101
Issue number22
DOIs
StatePublished - Nov 26 2012

Fingerprint

Dive into the research topics of 'Erratum: Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures (Appl. Phys. Lett. (2012) 101 (091601))'. Together they form a unique fingerprint.

Cite this