Evidence for reduced thermal conductivity in quantum dot active region from chirp characteristics in InGaAs/GaAs quantum dot lasers

H. Tan; K. Kamath; P. Bhattacharya; D. Klotzkin

Evidence for reduced thermal conductivity in quantum dot active region from chirp characteristics in InGaAs/GaAs quantum dot lasers

H. Tan
, K. Kamath
, P. Bhattacharya
, D. Klotzkin

Electrical and Computer Eng

Binghamton University

University of Cincinnati

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The thermal conductivity in quantum dot active region in InGaAs/GaAs quantum dot lasers was investigated. The device heterostructure is a multilayer In _0.4Ga _0.6As/GaAs grown by molecular beam epitaxy using self-organized growth. Particularly below threshold, there is a large fraction amount of nonradiative recombination occurring directly in QD active region. The results show that, above threshold, additional thermal effect are largely due to resistive heating from current injection, and hence QD and QW laser behavior above threshold is similar.

Original language	English
Article number	WS3
Pages (from-to)	619-620
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2
State	Published - 2004
Event	2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004 - Rio Grande, Puerto Rico Duration: Nov 7 2004 → Nov 11 2004

Cite this

@article{db9b5a605eb3403aa1b80268996d29a1,

title = "Evidence for reduced thermal conductivity in quantum dot active region from chirp characteristics in InGaAs/GaAs quantum dot lasers",

abstract = "The thermal conductivity in quantum dot active region in InGaAs/GaAs quantum dot lasers was investigated. The device heterostructure is a multilayer In 0.4Ga 0.6As/GaAs grown by molecular beam epitaxy using self-organized growth. Particularly below threshold, there is a large fraction amount of nonradiative recombination occurring directly in QD active region. The results show that, above threshold, additional thermal effect are largely due to resistive heating from current injection, and hence QD and QW laser behavior above threshold is similar.",

author = "H. Tan and K. Kamath and P. Bhattacharya and D. Klotzkin",

year = "2004",

language = "English",

volume = "2",

pages = "619--620",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004 ; Conference date: 07-11-2004 Through 11-11-2004",

}

Evidence for reduced thermal conductivity in quantum dot active region from chirp characteristics in InGaAs/GaAs quantum dot lasers. / Tan, H.; Kamath, K.; Bhattacharya, P. et al.
In: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Vol. 2, WS3, 2004, p. 619-620.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Evidence for reduced thermal conductivity in quantum dot active region from chirp characteristics in InGaAs/GaAs quantum dot lasers

AU - Tan, H.

AU - Kamath, K.

AU - Bhattacharya, P.

AU - Klotzkin, D.

PY - 2004

Y1 - 2004

N2 - The thermal conductivity in quantum dot active region in InGaAs/GaAs quantum dot lasers was investigated. The device heterostructure is a multilayer In 0.4Ga 0.6As/GaAs grown by molecular beam epitaxy using self-organized growth. Particularly below threshold, there is a large fraction amount of nonradiative recombination occurring directly in QD active region. The results show that, above threshold, additional thermal effect are largely due to resistive heating from current injection, and hence QD and QW laser behavior above threshold is similar.

AB - The thermal conductivity in quantum dot active region in InGaAs/GaAs quantum dot lasers was investigated. The device heterostructure is a multilayer In 0.4Ga 0.6As/GaAs grown by molecular beam epitaxy using self-organized growth. Particularly below threshold, there is a large fraction amount of nonradiative recombination occurring directly in QD active region. The results show that, above threshold, additional thermal effect are largely due to resistive heating from current injection, and hence QD and QW laser behavior above threshold is similar.

UR - https://www.scopus.com/pages/publications/14344261506

M3 - Conference article

SN - 1092-8081

VL - 2

SP - 619

EP - 620

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

M1 - WS3

T2 - 2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004

Y2 - 7 November 2004 through 11 November 2004

ER -

Evidence for reduced thermal conductivity in quantum dot active region from chirp characteristics in InGaAs/GaAs quantum dot lasers

Abstract

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